Allicdata Part #: | RN1961FE(TE85LF)TR-ND |
Manufacturer Part#: |
RN1961FE(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1961FE(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN1961FE(TE85L,F) is an integrated circuit found in transistors, specifically under the category of Bipolar (BJT) Arrays, Pre-Biased. This specific IC is a wideband amplifier capable of operating over a wide frequency band, and is often used in applications such as radio frequency amplifiers, low noise amplifiers, microwave amplifiers, and amplifying small power loudspeakers.
In regards to the actual output of the RN1961FE(TE85L,F), this specific integrated circuit is capable of delivering up to a maximum of 65 watt power at 8 ohms of impedance. It also has the capacity to operate over a frequency range of 10kHz to 1MHz. This range makes the integrated circuit particularly ideal for audio applications.
Now let us discuss the working principle of this integrated circuit. This circuit is designed using multiple transistors connected in an array. The collector of the jth transistor is connected to the emitter of the (j-1)th transistor Thus, all the transistors are connected in cascade. This arrangement increases the current gain of the respective transistors, while also increasing their overall input capacitance.
In regards to the input of the RN1961FE(TE85L,F), this integrated circuit is designed to receive voltage signals. Once the voltage signal is received, it is then sent to the transistors, where they amplify the signal according to the properties of the several transistors. Since the transistors are connected in cascade, the amplified signal is sent from the (j-1)th transistor to the jth transistor, resulting in a high gain output.
The RN1961FE(TE85L,F) also contains a pre-biased circuit. This type of circuit is designed to enable the circuit to quickly switch from one mode of operation to another, without having to make any changes to the input or output components. Additionally, the pre-biased circuit also helps reduce the distortion caused by the transistors when amplifying the input signal.
The RN1961FE(TE85L,F) is mainly used in applications where a wide frequency band is desired. As such, this integrated circuit is particularly ideal for applications such as radio frequency amplifiers, low noise amplifiers, and microwave amplifiers. Additionally, this IC is also well-suited for amplifying a small power loudspeaker.
In conclusion,
The specific data is subject to PDF, and the above content is for reference
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