RN1909FE(TE85L,F)

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The RN1909FE, with datasheet identifier TE85L,F, is a device from a class of transistors known as pre-biased arrays, bipolar junction transistors, that is used extensively for multiple purposes. The pre-biased nature of this type of transistor arrangement means that further external biasing is not necessary, keeping the circuit complexity much lower than it would otherwise be. The RN1909FE is typically used in amplification applications across the audio, video, and telecom frequency spectrum, and its high level of linearity, stability and overall consistent performance make it an ideal choice when an application requires a single component component solution.

The RN1909FE transistor is composed of four transistors linked in a bridge-style configuration. This bridge-style connection provides the added capability of being configured in two different ways, a Push Pull or a Push-Pull-Clip configuration. This allows for additional flexibility for applications requiring more performance optimization. The bridge configuration also eliminates unwanted disturbances, such as phase shifts, due to the common mode and differential mode operating conditions. This in turn results in higher reliability, better linearity and more precise control.

The high input/output impedance of this type of pre-biased array also contributes to its suitability for audio, video and telecom applications. The input/output impedance helps keep distortion levels low and enables this type of transistor array to suit low distortion at high frequencies, where most audio and video signal amplification is typically demanding. This is of particular use in applications such as audio signal switches and signal conditioners.

In addition to its use in signal amplification, the RN1909FE can also be used in varying types of signal conversion applications. The low power requirements of this type of transistor array also make it ideal for use in low power systems, particularly where cost is an issue. It is also capable of providing reliable performance in extreme temperatures where many other components may fail, making it especially suited for use in low temperature systems.

The working principle of the RN1909FE is relatively simple and can be explained in comparison to the more traditional arrangement of dual NPN bipolar transistors. In the NPN arrangement, two transistors are arranged in a common collector configuration, meaning that one transistor is connected to the base and the other is connected to the collector. When the voltage at the base increases, so too do the voltage and current at the collector, resulting in increased switching power. The transistors in the pre-biased array each have separate base and collector connections, however, meaning that the current gain of each device can be adjusted independently and the resulting voltage gain is adjustable, as well.

The RN1909FE is a highly versatile component, suitable for use in a variety of applications. Its pre-biased configuration helps reduce the complexity, size and cost of a circuit, while its high level of linearity and stability, along with its resistance to operating temperature extremes, make it an excellent choice in audio, video and telecom applications.

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