RN1967FE(TE85L,F)

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

The RN1967FE(TE85L,F) is a pre-biased, low power, low distortion general purpose dual N-channel FET array. It is a great choice for low power applications in both commercial and military applications. It is capable of providing the high precision current and voltage control needed in many applications, its low power consumption, fast switching speed, and low noise make it ideal for a variety of applications.

Application Field

The RN1967FE(TE85L,F) is typically used in applications where high current/voltage control and low power consumption are required. Applications for the RN1967FE(TE85L,F) include audio amplifiers, radio-frequency (RF) transmission and reception systems, high speed data processing, precision voltage and current sensing, and power supply control.

The RN1967FE(TE85L,F) is also used in applications requiring fast switching speeds, such as frequency multipliers, modulators, and synchronous logic circuits. Its low power consumption also makes it well suited for battery-powered applications like portable computers and handheld electronic devices.

Working Principle

The RN1967FE(TE85L,F) is a dual N-channel FET array with two N-channel MOSFETs in a single small package. The two transistors are electrically connected as a pair, so that their gate and drain terminals are connected together through a single lead to the source of the transistors. This allows the transistors to be connected to a common ground and gate source voltage, resulting in a well-defined pre-biased condition.

The operation of the RN1967FE(TE85L,F) is determined by the gate source voltage applied to the two transistors. When the gate source voltage is positive, the FETs are "on", allowing current to flow between the drain and source terminals. When the gate source voltage is negative, the FETs are "off" and no current can flow. This property of the FET arrays allows them to be used as switches to control both current and voltage flow in a variety of different applications.

The RN1967FE(TE85L,F) is also well suited for applications requiring low distortion and low noise, such as audio amplifiers. Its fast switching speed makes it suitable for high frequency applications, such as RF transmission and reception systems. The RN1967FE(TE85L,F) also offers the low power consumption and high control precision needed for power supply control and precision voltage and current sensing of devices.

Conclusion

In conclusion, the RN1967FE(TE85L,F) is a pre-biased, low power, low distortion general purpose dual N-channel FET array. It is a great choice for low power applications in both commercial and military applications. It is capable of providing the high precision current and voltage control needed in many applications, its low power consumption, fast switching speed, and low noise make it ideal for a variety of applications, including audio amplifiers, RF transmission and reception systems, high speed data processing, frequency multipliers, and power supply control.

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