RN1963(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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Introduction

The RN1963 (TE85L,F) is a pre-biased NPN array with an advanced breakdown diode configuration. It is designed to provide maximum performance and power efficiency when used in the right application. This article aims to explain the application field and working principle of the RN1963 (TE85L,F).

Functionalities

The RN1963 (TE85L,F) provides a simple and efficient solution for switching and high voltage applications. It has a breakdown voltage of 500 mV and capable of carrying high currents of up to 300 A. Additionally, it also has an outstanding switching speed of 5 ns. The integrated pre-biased feature of the device allows for faster and more reliable operation.

Application Field

Due to its wide range of functionalities, the RN1963 (TE85L,F) can be used for various applications such as power supplies, power switching applications, LED drivers, high-speed switching amplifiers, and motion control systems, among others. The integrated pre-biased feature of the device makes it an ideal choice for applications in which DC-to-DC voltage transfer is an important factor.

Working Principle

The RN1963 (TE85L,F) works on the principle of a NPN built-in array. This NPN array consists of four separate NPN transistors connected in series. The four NPN transistors share a common emitter which makes the overall implementation easy and cost-effective. The complete array also contains a breakdown diode that is used to provide protection against over-voltage and over-current.When power is applied, current flows through the four NPN transistors, causing them to switch on and off at different times. Depending on the current applied, the voltage output can be adjusted accordingly. The pre-biased feature of the device allows for faster switching time, reducing the time for a complete switching cycle. Additionally, the breakdown diode helps in protecting the device from any damage caused due to over-voltage and over-current.

Conclusion

In conclusion, the RN1963 (TE85L,F) is a pre-biased NPN array which provides superior performance and power efficiency. Its wide range of functionalities make it suitable for various high-speed switching applications such as LED drivers and motion control systems. Additionally, it also has a breakdown diode which helps in protecting the device against over-voltage and over-current.

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