RN1970(TE85L,F)

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RN1970 (TE85L,F) is a pre-biased array of high current Bipolar Transistors. It’s composed of 16×2 transistors in a single package and is intended for use in circuit applications where high reliability and high current capabilities are needed. The RN1970 is an optimal choice for applications such as power supplies, motor control, switching operations, and luminous lighting systems.

Figure 1. RN1970(TE85L,F)

The RN1970 is a monolithic, high-performance electronic module with a high-density cell structure. It is designed with a separate base layer, a junction layer and an output layer. This makes it possible to integrate twice the amount of bipolar transistors into the same space as standard transistors, creating a compact and cost-effective solution. This also improves thermal behavior and reduces switching losses.

The RN1970 has a range of current gain and transconductance. This allows for easier operation, enhanced monitoring, and improved reliability for circuits in the electrical power industry. Additionally, the device has a low forward voltage drop and a maximum power dissipation factor of 1.7V.

The working principle of the RN1970 is based on the bipolar transistor’s principles of operation. A bipolar transistor is a four-layer semiconductor device with two p-n junctions. It consists of three terminals: the emitter, the base and the collector.

Figure 2. RN1970’s Working Principle

The operation of the RN1970 is based on the same principles as that of any other bipolar transistor. When a current is applied to the base, the two p-n junctions form a current amplification. The input current is increased, or “amplified”, becoming the output current at the collector.

The RN1970 can be used in a variety of applications such as motor control, power supplies, HVAC, luminaire lighting, switching operations and many other applications. It can handle up to 10A over a wide range of duty cycles, temperatures and frequencies. It is one of the optimal solutions for applications where high current and high reliability are needed.

An example of the application of the RN1970 is in the design of a MCU-controlled switching power supply. The MCU controls the output current of the power supply and the supply voltage. The RN1970 acts as an interface between the MCU and the output components by providing current gain, temperature and frequency control. The high current and low voltage drop across the device allow for a more efficient and reliable power supply.

Figure 3. MCU Controlled Switching Power Supply

In conclusion, the RN1970 (TE85L,F) is a high-performance array of high current Bipolar Transistors. It is designed to provide high reliability, power density, and cost-effectiveness for applications where high current is needed. The device\'s high transconductance, low forward voltage drop and maximum power dissipation factor of 1.7V make it a suitable choice for designs requiring temperature and frequency control. Examples of applications include motor control, switching operations, power supplies and luminaire lighting.

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