Allicdata Part #: | RN1903LF(CTTR-ND |
Manufacturer Part#: |
RN1903,LF(CT |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1903,LF(CT Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03043 |
6000 +: | $ 0.02646 |
15000 +: | $ 0.02249 |
30000 +: | $ 0.02117 |
75000 +: | $ 0.01985 |
150000 +: | $ 0.01764 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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Today, we will be talking about the RN1903, also known as the LF (CT application field and working principle). The RN1903 is a pre-biased array of bipolar transistors. It is employed in many different applications due to its versatility and robust construction. This article will go over the basics of the RN1903 LF, CT application field and working principle.
LF stands for Low Gain, which means that the output of the transistor is low. The lower gain of the RN1903 allows it to be used in a wide variety of applications including audio, video, and RF amplifiers, as well as other high-frequency applications. It is also used in applications that require complex voltage regulation.
The RN1903 has a typical collector-emitter voltage of 8v (Vce) and the maximum collector-emitter voltage is 15v. The transistor has a hFE range of 4-200 and a collector-emitter saturation voltage Vce(sat) of 0.1v. The RN1903 also has an on-off current ratio of 100-400 for high frequency applications. This makes the RN1903 an ideal choice for applications that require efficient power distribution.
The RN1903 LF, CT application field and working principle is based on a pre-biased technique. This technique requires that the transistor is biased with a voltage before it is used. This voltage is applied to the base-emitter junction. This pre-biased voltage has two effects on the performance of the transistor. First, it influences the current gain, or hFE, of the transistor. Secondly, it sets the low voltage gain of the transistor as well. The pre-biased technique is used to improve the performance of the transistor in terms of linearity and noise.
The basic principle of operation of the RN1903 LF, CT application field and working principle is relatively straightforward. The input signal is applied to the base of the transistor. This voltage is then amplified by the transistor, producing an output signal. The output signal is then used either as an output voltage (Vout) or as an input to a control circuit (Vin). The output voltage is usually determined by the voltage gain of the transistor. The voltage gain is determined by the ratio of the collector current to the base current.
The RN1903 LF, CT application field and working principle is a great choice for many applications. Its low voltage gain and adjustable pre-biased technique make it an ideal choice for applications that require precise voltage regulation, such as audio and video amplifiers. It is also suitable for RF and high frequency applications, thanks to its high current gain and low saturation voltage. Additionally, the array design of the RN1903 makes it suitable for use in applications that require efficient power distribution.
The specific data is subject to PDF, and the above content is for reference
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