RN1968FE(TE85L,F) Discrete Semiconductor Products |
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| Allicdata Part #: | RN1968FE(TE85LF)TR-ND |
| Manufacturer Part#: |
RN1968FE(TE85L,F) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
| DataSheet: | RN1968FE(TE85L,F) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 22 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 250MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | ES6 |
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The RN1968FE(TE85L,F) application field and working principle can be classified under transistors - bipolar (BJT) - arrays, pre-biased. It is a four-channel audio system with pre-biased design that is perfectly suited for applications such as Hi-Fi amplifiers,Hi-Fidelity systems and other audio applications such as car audio. The pre-biased design utilizes a special arrangement of transistors that reduces the system’s power supply size and cost, while still providing the user with superior combined efficiency, power and performance.
The RN1968FE(TE85L,F) features a number of features that make it an attractive choice for audio applications. The pre-biased design increases the efficiency of the system, allowing the user to obtain a greater amount of power with a lesser amount of voltage supplied. Additionally, the lower supply voltage reduces distortion and other artifacts found in more traditional designs.
The RN1968FE(TE85L,F) also features a high power output with a low input current, meaning that the user can achieve a greater amount of output power with less input current. This makes it ideal for high-driven audio applications such as subwoofers,dynamic speakers and other applications that require large amounts of power.
The other feature of the RN1968FE(TE85L,F) is its unique architecture. This unique design allows for the integration of multiple transistors and allows for the use of a large number of transistors in a single audio channel. This unique design reduces the size of the resulting parts, thus reducing the cost and size of the system, while still providing the user with superior audio quality.
The RN1968FE(TE85L,F) system is also highly efficient and provides excellent audio quality, as well as a low power consumption rate. This makes the system ideal for applications such as Hi-Fi amplifiers and other audio applications. Additionally, the pre-biased design also allows for a greater amount of power to be obtained with less voltage, thus helping to reduce distortion and other artifacts found in more traditional designs.
Overall, the RN1968FE(TE85L,F) application field and working principle can be classified under transistors - bipolar (BJT) - arrays, pre-biased. It is an ideal choice for applications such as Hi-Fi amplifiers,Hi-Fidelity systems and other audio applications such as car audio. It is a highly efficient audio system with a pre-biased design that provides superior combined efficiency, power and performance.
The specific data is subject to PDF, and the above content is for reference
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RN1968FE(TE85L,F) Datasheet/PDF