RN1911FETE85LF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	ES6

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Traditional Bipolar Junction Transistor (BJT) Arrays

The RN1911FETE85LF is a type of Bipolar Junction Transistor (BJT) array. It belongs to the class of Pre-Biased devices, meaning each of its transistors have been configured with a bias voltage level prior to their implementation in the final circuit. This setup has several advantages such as improved common-mode stability, easier control of transistor charging, and better power dissipation capabilities.

Application Field of the RN1911FETE85LF

vertical power switchingThe RN1911FETE85LF is a versatile device that can serve many purposes. It is most often used in vertical power switching applications, particularly as a proxy for an entire circuit of individually-controlled transistors. This type of setup ensures efficient heat management, as the entire array dissipates heat more effectively than an individual transistor. In applications such as vertical power switching, the integrated array also save space and money by requiring fewer components.Analog circuitsThe FETE85LF is also frequently used in analog circuits. Its pre-biased nature ensures a stable power supply regardless of dynamic load changes, making it an ideal choice for sophisticated ADC and DAC circuits. When paired with a voltage reference for temperature or pressure sensing, the RFETE85LF also provides reliable current measurement and proportional temperature control capabilities.

Working Principle

The RN1911FETE85LF operates on the principle of bipolar junction transistors (BJT) arrays. Its configuration consists of two transistors: an NPN and a PNP connected in an “H”bridge. BJT transistors are current amplifiers that control the current in a circuit by changing the voltage applied from an external source. The RN1911FETE85LF is a “pre-biased” array, meaning that its internal transistors have been configured with a specific bias voltage level. This level is set in order to guarantee a certain current level that can then be employed to power certain circuit operations.The NPN and PNP transistors can be used separately or in combination, depending on the requirements of the application. For example, in a vertical power switching application, the NPN can be employed to turn on and off the circuit, while the PNP provides the operational power.

Conclusion

The RN1911FETE85LF is a versatile Pre-Biased Bipolar Junction Transistor (BJT) array. It is most often employed in vertical power switching applications for its efficient heat management, although it also finds use in analog circuitry for its reliable current measurement and proportional temperature control capabilities. Its pre-biased nature ensures a stable power supply regardless of dynamic load changes. Its two transistors, an NPN and a PNP connected in an “H”bridge, can be employed separately or in combination, depending on the requirements of the application.

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