RN1970FE(TE85L,F) Discrete Semiconductor Products

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RN1970FE(TE85L,F) is a part of transistors – bipolar junction transistors (BJT) – arrays, pre-biased and is used in a wide range of applications, such as for high frequency applications, for audio applications, for enlarging the power bandwidth of an amplifier and for providing logic switching capabilities. This article will examine the functionality of the RN1970FE(TE85L,F) and the various principles and applications it is used for.

RN1970FE(TE85L,F) Description

The RN1970FE(TE85L,F) is a pre-biased array of ten PNP and NPN transistors. It is designed to offer maximum performance with minimal settup time and effort. The hFE (current gain) of each bipolar transistor varies and will range in hFE values from 35-100. Each transistor is configured into either a common-emitter or a common-collector configuration for maximum gain and speed. The power dissipation rating of the RN1970FE(TE85L,F) is 5 watts and the operating temperature range is from -55 to 125 degrees Celsius. The transistors within the array are mounted in a hermetically sealed package, which enhances the long-term stability and reduces the susceptibility to environmental conditions, such as temperature and humidity.

RN1970FE(TE85L,F) Working Principle

The working principle of the RN1970FE(TE85L,F) revolves around the use of its ten transistors. Individual transistors within the array can be configured in either a common-emitter or a common-collector circuit. A common-emitter circuit will amplify voltage signals whereas a common-collector circuit will amplify current. Depending on the application, both types of configurations can be used. Each of the single transistors exhibits an hFE (or current gain) that is typically within the range of 35-100. The array of transistors offers very high current gain bandwidth.

RN1970FE(TE85L,F) Applications

The RN1970FE(TE85L,F) array can be implemented in a wide range of applications which require high frequency, audio and logic switching. In applications that require a high frequency response, such as video applications, the array of transistors can be used to amplify higher frequencies, allowing for clearer and sharper signals. The array of transistors can also be used to increase the power bandwidth of an amplifier. The transistors can also be used to provide logic switching capabilities. Logic switching allows for the control of multiple components with a single switch. The transistors can also be used for audio applications such as loudspeakers to enhance their performance.

Conclusion

In conclusion, the RN1970FE(TE85L,F) is a part of transistors – bipolar junction transistors (BJT) – arrays, pre-biased. The transistors within the array are configured in either a common-emitter or common-collector configuration for maximum gain and speed, depending on the needs of the application. The array of transistors within the RN1970FE(TE85L,F) offers very high current gain bandwidth and can be used in a wide range of applications, such as for high frequency, audio and logic switching.

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