
Allicdata Part #: | SFT1446-TL-HOSTR-ND |
Manufacturer Part#: |
SFT1446-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A TP-FA |
More Detail: | N-Channel 60V 20A (Ta) 1W (Ta), 23W (Tc) Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TP-FA |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 23W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 51 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SFT1446-TL-H is part of a family of discrete semiconductor products, specifically a single high-power Field-Effect Transistor (FET). It is an N-channel FET designed for high power amplifying and high-speed switching circuits. As such, it is typically used in a wide range of applications ranging from power supply circuits, power amplifiers and radio frequency devices in industrial and automotive industries, to communication receivers and high-speed logic devices used in modern digital electronics.
This specific device belongs to Fairchild’s SuperFET Family of power FETs, which are high power transistors built on a single Silicon substrate and manufactured using the latest advanced process technologies resulting in high-speed rugged devices capable of taking very high power. In particular, the SFT1446-TL-H is a single N-channel FET developed for high power amplifiers and high-speed switch circuits. It is rated for a maximum drain current of 4A and a maximum drain to source voltage of 100V.
The SFT1446-TL-H utilizes a patented design to achieve higher switching speeds and improved energy efficiency, as well as minimizing system cost by reducing the number of components and minimizing board area, making it extremely cost-effective. It has an operating temperature range from -55° to 150°, and a maximum power dissipation of 35W.
The working principle of the SFT1446-TL-H is based on the basic functioning principles of any FET. The FET uses the electric field phenomenon to control electron flow between its three terminals, between drain, gate and source. Voltage is applied to the gate terminal, which attracts and repels electrons and creates an electric field between the source and drain. Depending on the voltage applied to the gate terminal, the electric field strength between the source and drain can be increased or decreased, resulting in increased or decreased conduction between the source and drain terminals.
In a N-channel FET, the gate source behaves like a P-channel transistor. When a positive voltage is applied to the gate terminal, the electrons will be repelled, increasing the voltage between the source and drain, thus increasing conduction between the two terminals. Conversely, when a negative voltage is applied to the gate, the electrons will be attracted, decreasing the voltage between the source and the drain, thus reducing the conduction between the two terminals. In essence, by controlling the voltage applied to the gate terminal, the SFT1446-TL-H is able to control the flow of current through the device.
The SFT1446-TL-H can be used in a variety of applications, from high power switching and amplifying to high-speed logic operations. It is suited for such applications as DC and AC motor drives, uninterruptible power supplies, and automotive power applications. It can also be used in RF devices, such as transmitters, receivers, and communication networks, as well as for high-speed logic operations and power supplies. Additionally, the SFT1446-TL-H is a great choice for applications requiring high current and high power dissipation, and it is a great choice for applications in industrial and automotive, communications, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SFT1202-TL-E | ON Semicondu... | 0.39 $ | 700 | TRANS NPN 150V 2A TP-FABi... |
SFT18GHR0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A TS... |
SFT11G A1G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A TS-... |
SFT12G R0G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A TS... |
SFT14G A1G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A TS... |
SFT18GHA1G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A TS... |
SFT1440-TL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1.5A TP-... |
SFT18G A0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A TS... |
SFT1445-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 17A TPN-... |
SFT1443-TL-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 9A TP-FA... |
SFT1202-E | ON Semicondu... | -- | 974 | TRANS NPN 150V 2A TPBipol... |
SFT1446-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 20A TPN-C... |
SFT1443-W | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 9A IPAKN... |
SFT11GHR0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A TS-... |
SFT14GHA1G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A TS... |
SFT1450-TL-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 40V 21A TP-FA... |
SFT13GHA0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A TS... |
SFT15GHA1G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A TS... |
SFT14GHR0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A TS... |
SFT1345-TL-H | ON Semicondu... | 0.43 $ | 1000 | MOSFET P-CH 100V 11A TP-F... |
SFT11GHA0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A TS-... |
SFT1341-C-TL-E | ON Semicondu... | -- | 1000 | MOSFET P-CHP-Channel 40V ... |
SFT1443-TL-W | ON Semicondu... | -- | 1400 | MOSFET N-CH 100V 9A TP-FA... |
SFT17G A0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 500V 1A TS... |
SFT1423-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 2A TPN-C... |
SFT1341-TL-W | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 40V 10A TP-FA... |
SFT17GHR0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 500V 1A TS... |
SFT11G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A TS-... |
SFT1452-TL-W | ON Semicondu... | 0.21 $ | 1000 | MOSFET N-CH 250V 3A DPAKN... |
SFT12G A0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A TS... |
SFT1446-TL-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 20A TP-FA... |
SFT1458-TL-H | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 1A DPAKN... |
SFT1342-E | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 12A IPAK/... |
SFT1345-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 100V 11A TPP-... |
SFT1445-TL-H | ON Semicondu... | 0.41 $ | 700 | MOSFET N-CH 100V 17A TPN-... |
SFT1431-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 35V 11A TPN-C... |
SFT1431-TL-W | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 35V 11A TP-FA... |
SFT17GHA0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 500V 1A TS... |
SFT1458-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1A IPAKN... |
SFT14G R0G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A TS... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
