
Allicdata Part #: | SMMBTA14LT1GOSTR-ND |
Manufacturer Part#: |
SMMBTA14LT1G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 30V 0.3A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 300m... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.02647 |
6000 +: | $ 0.02302 |
15000 +: | $ 0.01957 |
30000 +: | $ 0.01841 |
75000 +: | $ 0.01727 |
150000 +: | $ 0.01535 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | 125MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBTA14 |
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The SMMBTA14LT1G is a Single Bipolar Junction Transistor (BJT) device from STMicroelectronics which is widely used in a variety of applications. In this article we will look at the device’s field of application and its working principle from a technical point of view.The SMMBTA14LT1G is a general purpose, single NPN silicon transistor, which offers a wide range of uses for most applications that require switching, amplification or speed control. It has a maximum collector-emitter voltage of 60 V and a maximum power dissipation of 500 mW. This makes it ideal for low-power applications such as voltage regulator circuits, logic circuits, amplifiers, radio receivers, and digital circuits.In terms of its operating principle, the SMMBTA14LT1G is a 3-terminal device containing two PN junctions. The base-emitter junction is forward-biased, while the base-collector junction is reverse-biased. When an external current is applied to the base-emitter junction, it creates a strong electric field, which causes current to flow through the device. This current is called Base Current and is proportional to the amount of current applied to the base. The Base Current then controls the collector current, which is the current that is allowed to flow from the collector to the emitter by the device.The device works by biasing the base-emitter junction with the Base Current. The Base Current causes the forward-biased PN junction between the base and the collector to become more tightly coupled, allowing more current to flow through the transistor. This increased current allows the collector to control the voltage at the emitter, which in turn regulates the current flowing through the rest of the circuit.In applications requiring switching, amplification or speed control, the SMMBTA14LT1G is an ideal solution. It can handle high voltages and currents while providing excellent switching speed, making it an ideal choice for power applications such as power inverters and motor control circuits. Additionally, the transistor allows for precise control of the voltage and current at the emitter, making it suitable for use in high-frequency applications and amplifiers.In summary, the SMMBTA14LT1G is an excellent all-purpose single NPN bipolar junction transistor, which provides an excellent range of uses for many low-power applications. It provides excellent switching speed, high voltages and currents and precise voltage and current regulation, making it perfect for applications requiring switching, amplification or speed control.
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