SMMBF4393LT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SMMBF4393LT1G is a Junction Field Effect Transistor (JFET), a type of unipolar transistor that uses electron-beam-induced doping of a semiconductor substrate as its predominant current-conducting channel. It is generally used for applications requiring low power consumption and high gain. In JFETs, the current conducted between the source and drain electrodes is controlled externally by a voltage applied to the gate.

The SMMBF4393LT1G is a depletion-mode device, meaning its source-drain current decreases as the gate voltages increases above 0V. Typical uses for it include voltage level shifting, low-noise amplification, and as a feedforward amplifier. It has very low noise when used in conjunction with a low noise amplifier, and can be used to create oscillator circuits with very low noise and ripple.

The SMMBF4393LT1G has a great number of applications and is extremely versatile, with several special handling requirements. It can be used as a high-frequency oscillator, variable resistor, low-pass filter and voltage amplifier. Additionally, it can be used as an AC and RF amplifier, digital logic gates and high-speed switching, and as a current limiter.

The path of current in an SMMBF4393LT1G is primarily determined by the gate. The gate, which is insulated from the rest of the circuit, is electrically connected to the semiconductor substrate by an intervening dielectric layer. When a voltage is applied between the gate and the semiconductor substrate, an electric field is created that extends along the length of the semiconductor channel. The channel is p-type, meaning that holes will drift towards the gate when a negative voltage is applied to it. The number of holes in the channel can then be controlled by adjusting the gate voltage.

In addition to the voltage requirements, the SMMBF4393LT1G also requires a certain temperature range for proper operation. Its maximum operating temperature range is -55°C to 150°C. At temperatures below -55°C, its gate may become permanently damaged, causing it to become unusable. Similarly, its minimum operating temperature is −150°C, beyond which its gate can become unstable. During normal operation, the source-drain voltage must remain below its maximum voltage ratings or it can become damaged.

In summary, the SMMBF4393LT1G is a general-purpose JFET used for a wide range of applications. It is a depletion-mode device, meaning its source-drain current decreases as the gate voltage increases above 0V. It has a low power consumption, high gain and low noise when used in conjunction with a low noise amplifier. It can be used in voltage level shifting, low-noise amplification, oscillator circuits, high-frequency oscillators, variable resistors, low-pass filters, voltage amplifiers, AC amplifiers, RF amplifiers, digital logic gates, high-speed switching, and current limiters. It requires a certain temperature range for proper operation, with a minimum operating temperature of -150°C and a maximum operating temperature of 150°C. The SMMBF4393LT1G is an extremely versatile and useful transistor for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference