SMMBT5089LT1G Allicdata Electronics
Allicdata Part #:

SMMBT5089LT1G-ND

Manufacturer Part#:

SMMBT5089LT1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.05A SOT23
More Detail: Bipolar (BJT) Transistor NPN 25V 50mA 50MHz 300mW ...
DataSheet: SMMBT5089LT1G datasheetSMMBT5089LT1G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.05334
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Power - Max: 300mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5089
Description

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The SMMBT5089LT1G is a NPN Bipolar Transistor (BJT) mostly used in the power management field, due to its low cost and high efficiency. It is perfect for use in applications such as automotive, industrial and consumer electronics, computer peripherals and whitegoods.

This device is often seen in high peak power applications, where rapid loading and unloading of electrical current is necessary. Its advanced processing techniques make it suitable for a variety of high-clarity and high-voltage applications.

This BJT typically needs two base terminals to control the current that flows between the collector and emitter. By controlling the current through the base terminal, the current between the collector and emitter can then be varied by a small current at the base. This current is typically referred to as the “bias current”.

The BJT is made of a three-layer semiconductor material that operates in a simple but efficient way by controlling the current flow. The first layer (the base) is made of highly doped n-type semiconductor material. The second layer (the collector) is made of heavily doped p-type semiconductor material, and the third layer (the emitter) is made of lightly doped n-type semiconductor material.

The bias current flowing through the base will cause majority carriers (holes) to be injected into the second layer (collector). This current is then amplified and transferred to the third layer (emitter) by minority carriers (electrons). The current from the emitter is usually much larger than the current from the base, due to the gain of the device.

The SMMBT5089LT1G can be used in many different applications. Its maximum operating voltage is 80V, ensuring a high safety factor for high current applications. It can also be used in low noise amplifier applications, due to its low noise figure of 0.25nV/√Hz. Furthermore, this BJT has an extremely fast switching speed of 0.1nsec, making it ideal for high frequency applications such as digital circuits.

Overall, the SMMBT5089LT1G is a highly effective, reliable and efficient NPN Bipolar Transistor to be used in many different applications. With its low cost and high performance, it is the ideal choice for any power management application.

The specific data is subject to PDF, and the above content is for reference

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