SMMBFJ310LT3G

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The SMMBFJ310LT3G is a N-channel enhancement mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) optimized for use in high power, low frequency and low noise amplification applications. The device is available in a 3-lead power package, making it suitable for surface mount technology, and it features a minimum switch ON-state resistance of 1.3 ohm, an operating voltage up to 30V, a maximum drain current up to 6A and a maximum power dissipation of 140W. The SMMBFJ310LT3G is designed for high current RF amplification applications ranging from 0 to 1.5GHz, and is capable of delivering high power and tight spectral performance.

GaN HEMTs are categorized as “second generation” FETs, with characteristics and capabilities that make them the next evolution of field-effect transistor design. As opposed to first generation FETs, such as traditional silicon MOSFETs, GaN HEMTs offer improved switching speed and efficiency, wider bandwidth, and higher power handling capabilities. This makes them ideal for high-power, high-frequency, low-noise amplification applications, where well-defined voltage characteristics and minimal output capacitance are desired.

The SMMBFJ310LT3G utilizes a proprietary circuit design to deliver optimal performance characteristics, allowing it to achieve high gain and high output power at high frequencies. Its physical construction is composed of a GaN semiconductor material layer in a N-channel “gate-drain” configuration. The devices unique structure prevents absorption of the gate electric field by the drain, allowing it to achieve extremely high gain, low noise and very low gate leakage current. The device also features a “Hot-Carrier Mode” that significantly reduces power losses, thus increasing switching speed and efficiency.

The SMMBFJ310LT3G is designed with integrated biasing networks, making it easy to use and suitable for a wide range of RF signal amplification applications. Commonly used applications include high efficiency power amplifiers (PA), where the SMMBFJ310LT3G can be used to provide amplification of mid- and high-frequency signals, or as a feed-forward-amplifier, where it can be used to reduce phase distortion at high power levels. The SMMBFJ310LT3G can also be used in high power automotive applications, such as remote communication and testing systems, or as an industrial amplifiers for radio and radar systems.

In conclusion, the SMMBFJ310LT3G is an ideal choice for high current RF amplification applications ranging from 0 to 1.5GHz. Its optimized circuit design and proprietary Hot-Carrier Mode assist in producing high power and tight spectral performance, making it suitable for a wide range of RF signal amplification applications.

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