SMMBT3904LT3G ON Semiconductor

Series:	--
Packaging:	Digi-Reel®
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	300mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

SMMBT3904LT3G is a type of bipolar junction transistor (BJT) which specifically falls within the Transistors - Bipolar (BJT) - Single family. By effectively controlling electric current, BJTs modulates signal in many different devices. SMMBT3904LT3G is a complete NPN solution that can be comprised of both power and low-power varieties with the necessary impedance and current capabilities to suit both digital and analog circuits.

Features of SMMBT3904LT3G

SMMBT3904LT3G features a very low saturation voltage (Vce(sat)), fast switching time, low noise and a wide temperature range. The BJT also offers high frequency stability and current gain (hFE) over a wide range of collector currents. Other notable features include a low power consumption, double-diffused collector structure, and high gain-bandwidth ratio. It is available in the surface-mount SOIC-8 and the SOT-23-3 packages.

SMMBT3904LT3G Application Field

Due to its miniature size and pin compatible equivalents, SMMBT3904LT3G is widely used in a range of digital and mixed-signal designs, including instrumentation, audio, power amplifiers, data converters, USB interfaces, load switches, industrial instrumentation and audiovisual systems. In addition, it is extensively used in application fields like automotive and industrial electronics, such as load drivers, DC-to-DC but drivers, displays, and voltage regulators, which require low power consumption, fast switching speeds, and high accuracy.

Working Principle of SMMBT3904LT3G

SMMBT3904LT3G works by using a flow of electrons to control current between a base and collector into a flow of holes between the emitter and collector. The key function of a BJT is to amplify electrical current by using a small current to control and switch a larger current on and off. SMMBT3904LT3G utilizes an NPN structure which consists of an emitter, a collector, and a base. When normal bias voltage is applied, electrons flow from the emitter to the base, while holes flow from the base to the collector. The electron-hole recombination within the base produces current from the collector to the emitter, thereby creating a flow of current from the collector to the emitter. The current gain of the transistor is determined by the ratio of collector current (Ic) to the base current (Ib), i.e. hFE= Ic/Ib. NPN transistors require a negative voltage applied to the base due to the lower barrier energy of electrons than holes.

Conclusion

SMMBT3904LT3G is a type of bipolar junction transistor (BJT) which falls into the singles family of transistors. Its small size and pin compatible equivalents make it widely used in instrumentation, audio, power amplifiers, data converters, USB interfaces, and voltage regulators. Its working principle is based on using a flow of electrons to control current between a base and collector into a flow of holes between the emitter and collector.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description