Allicdata Part #: | SSM3J117TULFTR-ND |
Manufacturer Part#: |
SSM3J117TU,LF |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CHANNEL 30V 2A UFM |
More Detail: | P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount UFM |
DataSheet: | SSM3J117TU,LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.06912 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | UFM |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 15V |
Vgs (Max): | ±20V |
Series: | U-MOSII |
Rds On (Max) @ Id, Vgs: | 117 mOhm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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<A MOSFET (metal oxide semiconductor FET) is a voltage-controlled field-effect transistor (FET) with a gate insulated from the channel, allowing for more versatile operation. The SSM3J117TU,LF is a single N-Channel enhancement-mode MOSFET transistor designed for use as a switch and amplifier in modern electronic systems, such as for controlling power in integrated circuits, for DC and pulse signal amplification, and for signal switching in mobile phones and computer systems.The device is designed to operate efficiently in high-frequency applications, from 10MHz to 125MHz, making it a great choice for use in applications such as low standby power, switching and rectifier circuits.
The SSM3J117TU,LF has a low threshold voltage of 2V as well as a low on-state capacitance of 5pF, making it a great solution for low-power and high-speed applications. The device also has a low on-resistance of 0.7 Ohms, allowing for efficient power management. Additionally, the device has a maximum end-of-life voltage of 18V, making it suitable for use in high voltage applications.
The SSM3J117TU,LF has a very simple working principle; voltage is applied to the gate of the transistor, allowing current to flow through the transistor. When the voltage is removed, the current flow stops. This versatile switch is used to control the flow of current in digital and analog circuits, allowing for the generation of signals or amplifying signals, or for controlling the power supply of systems or components. The device is capable of operating at very high speeds, allowing for fast and efficient data transfer and processing in high-frequency applications.
The SSM3J117TU,LF is an ideal transistor for applications such as high-speed, low-power and high-voltage switching and rectification. The device\'s simple working principle, low driving voltage and low on-resistance make it ideal for applications in which reliable and efficient switching operations are required. The high-frequency capability of the device makes it perfect for use in high-speed, high-frequency applications, such as mobile phones and computer systems.
Overall, the SSM3J117TU,LF is a versatile field-effect transistor designed for use in high-speed, low-power and high-voltage applications. Its simple working principle and low drive voltage make it the perfect choice for applications in which efficient switching operations are needed. Additionally, the device is capable of operating at very high frequencies, making it a great choice for high-speed circuitry.
The specific data is subject to PDF, and the above content is for reference
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