Allicdata Part #: | SSM3K16CTL3FTR-ND |
Manufacturer Part#: |
SSM3K16CT,L3F |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F CST3 FET (LF) TRANSISTO |
More Detail: | N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | SSM3K16CT,L3F Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.02833 |
Vgs(th) (Max) @ Id: | 1.1V @ 100µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C |
Power Dissipation (Max): | 100mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9.3pF @ 3V |
Vgs (Max): | ±10V |
Series: | π-MOSIV |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SSM3K16CT,L3F are a type of field effect transistors (FETs) and a subcategory of metal oxide semiconductors (MOSFETs). FETs are generally devices that control the flow of electric current by applying an electric field, rather than voltage. This makes them ideal for use in high-speed switching applications, such as power supplies, synchro motors and other types of motor control and communication systems. MOSFETs are a type of FET which use a metal oxide layer as the gate dielectric, instead of the conventional semiconductor gate material. SSM3K16CT,L3F is a single-channel or single-gate MOSFET, which is suitable for a variety of common applications.
The primary advantage of using SSM3K16CT,L3F is that they have a very low input capacitance, which makes them highly efficient for energy-saving applications. This, in turn, can be used to reduce the overall power consumption of any device which uses them. Additionally, SSM3K16CT,L3F are made of a highly durable material and can withstand a wide range of temperatures and rough handling. This makes them suitable for a variety of environments, such as in high-speed motor systems and for home appliance motor control.
SSM3K16CT,L3F work by controlling the flow of current via a linear voltage gradient created by the metal oxide layer on the gate dielectric. When a voltage is applied to the gate, electrons flow through the oxide layer, which produces a positive-negative electric field on the surface of the transistor. This field controls the amount of current that flows through the transistor. The result is a smooth and linear current control, which makes SSM3K16CT,L3F ideal for use in a variety of applications.
Additionally, SSM3K16CT,L3F are easily configurable, making them suitable for a variety of applications. The transistors can be set to a low threshold or low switching frequency, allowing them to be used in low-power applications, or set to a higher threshold in order to increase the speed at which the current is switched on and off. Dependent on the application, SSM3K16CT,L3F can be configured for low power or high speed operation. This allows for greater flexibility when designing the overall circuit, making SSM3K16CT,L3F a versatile MOSFET.
In summary, SSM3K16CT,L3F are a type of FETs, and a subcategory of metal oxide semiconductor FETs that can be used in many different types of applications. They have a low input capacitance and are compatible with a range of voltages. Additionally, they are easily configurable, which makes them suitable for a variety of applications. The primary advantage of using SSM3K16CT,L3F is that they are highly efficient, which can lead to reduced power consumption and increased efficiency in many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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