SSM3K15ACTC,L3F Discrete Semiconductor Products |
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Allicdata Part #: | SSM3K15ACTCL3FTR-ND |
Manufacturer Part#: |
SSM3K15ACTC,L3F |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 100MA CST3C |
More Detail: | N-Channel 30V 100mA (Ta) 500mW (Ta) Surface Mount ... |
DataSheet: | SSM3K15ACTC,L3F Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.02587 |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3C |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13.5pF @ 3V |
Vgs (Max): | ±20V |
Series: | U-MOSIII |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM3K15ACTAL3F is a type of Metal–oxide–semiconductor field-effect transistor (MOSFET) which is a building block for many electronics and electrical components. The SSM3K15ACTAL3F is a type of single-gate MOSFET, and can be used in many applications depending on the specific requirements of the circuit it is used in. In this article, we will look at the application field of the SSM3K15ACTAL3F and its working principle.
The SSM3K15ACTAL3F MOSFET is a type of field-effect transistor (FET) which is designed to be used in applications where a low on-state resistance and high current capability are needed. Its application can range from low-voltage analog circuits to high-power switching circuits. It features a relatively low gate threshold voltage (VGS ≤ 0.7 V), which makes it suitable for use in low-power applications.
The SSM3K15ACTAL3F can also be used for various power switching applications, such as home automation and robotics. The device has an extremely low gate-threshold voltage, as low as 0.7 V, which makes it suitable for use in low-power applications. Additionally, the SSM3K15ACTAL3F has a drain-source breakdown voltage (BVDSS) of 15 V and a drain-source on-state resistance (RDS(on)) of 0.45 ohms. This makes it suitable for applications where a high level of control and precision is required, such as those found in power converters and motor control systems.
The SSM3K15ACTAL3F also has a very low quiescent current, which makes it especially suited for use in battery-operated and portable electronics. Furthermore, the SSM3K15ACTAL3F features a shielded gate structure, which helps to reduce the device’s susceptibility to noise and electro-magnetic interference. This makes it ideal for use in noise-sensitive applications such as medical devices.
Now that we have discussed the SSM3K15ACTAL3F and its application field, let\'s look at its working principle. MOSFETs work by controlling the electric field between the drain and source. In the SSM3K15ACTAL3F, when voltage is applied to the gate of the transistor, it forms an electric field which reduces or increases the resistance between the drain and source of the transistor. When the gate voltage is below the threshold voltage, the transistor is in a non-conducting state or is “turned off”; conversely, when the gate voltage is above the threshold voltage, the transistor is in a conducting state or is “turned on”. This on/off behavior of the transistor is how it can be used to switch loads.
In conclusion, the SSM3K15ACTAL3F is a type of single-gate MOSFET, and it can be used in many applications ranging from low-voltage analog circuits to high-power switching circuits. Its low gate threshold voltage, low quiescent current, and shielded gate structure also make it particularly suitable for use in noise-sensitive applications. Its working principle relies on the electric field formed between the drain and source when voltage is applied to the gate of the transistor.
The specific data is subject to PDF, and the above content is for reference
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