SSM3K7002BF,LF Allicdata Electronics
Allicdata Part #:

SSM3K7002BFLFTR-ND

Manufacturer Part#:

SSM3K7002BF,LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 60V 0.2A S-MINI
More Detail: N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: SSM3K7002BF,LF datasheetSSM3K7002BF,LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: U-MOSIV
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: --
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
FET Feature: --
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-59
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The SSM3K7002BF,LF is a single, MOSFET transistor that has a wide range of applications, and a working principle that must be understood in order to benefit from its features. This type of transistor is typically used in many different low and high voltage components of electronic circuits, including automotive, consumer, and aerospace applications.

At the core, MOSFET transistors are voltage-controlled devices that are ideal for switching, amplifying, and steering signals. The SSM3K7002BF,LF, specifically, is an N-Channel Enhancement-Mode MOSFET that is capable of operating over an extended temperature range, making it highly reliable and robust for long-term use. This device is also well-suited for general purpose high frequency applications, such as switching and amplification, as well as consumer electronics, automotive, and power supply applications.

The SSM3K7002BF,LF features a maximum drain-source voltage of 55V, a drain current of 32A, and a maximum drain-source on-resistance of just 0.0019 Ohms. This allows the device to handle extreme power levels without dissipating a significant amount of heat. Additionally, the device features low capacitance characteristics that allow for low distortion in signal levels, which is ideal for audio applications.

The working principle of the SSM3K7002BF,LF is the same as any other MOSFET transistor. When a positive voltage is applied to the gate, current flows through the MOSFET, and when the voltage applied to the gate is negative, current is prevented from flowing through the transistor. This simple but effective working principle allows the SSM3K7002BF,LF to be used for a wide range of applications.

The SSM3K7002BF,LF is most commonly used in high power switching situations, as current can be controlled in a very efficient manner. This device can also be used for low-noise signal amplification, as the low-capacitance characteristics provide excellent signal preservation. Additionally, the device can be used in automotive applications, such as automotive electronic control units.

Overall, the SSM3K7002BF,LF single MOSFET transistor is an ideal device for a wide range of high power and low noise applications. Its low capacitance characteristics provide excellent signal preservation, and its wide operating temperature range make it highly reliable and robust. Its simple working principle allows for easy understanding and implementation, and its low drain-source on-resistance provides for efficient current control, making it ideal for high power switching requirements.

The specific data is subject to PDF, and the above content is for reference

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