Allicdata Part #: | SSM3K309T(TE85LF)TR-ND |
Manufacturer Part#: |
SSM3K309T(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 4.7A TSM |
More Detail: | N-Channel 20V 4.7A (Ta) 700mW (Ta) Surface Mount T... |
DataSheet: | SSM3K309T(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 4A, 4V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSM |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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SSM3K309T (TE85L, F) Application Field and Working Principle
SSM3K309T(TE85L,F) is a type of n-channel Mosfet, which belongs to the field effect transistor category. It uses an electric field to control the flow of current from the source to drain. The SSM3K309T(TE85L,F) has an on-resistance of 5 ohms at 10V and a switching speed of 10 ns maximum. It is available in an enhanced TO-220 package with a drain source voltage of 30V and a drain current of 3A.
The SSM3K309T(TE85L,F) is used in a variety of applications, including power supply control, switching regulators, motor and fan control, and electronic loads. It is also used in motor vehicles, industrial equipment, and power conversion systems.
The working principle of the SSM3K309T(TE85L,F) transistor is based on the flow of electrons from the source to the drain. When a voltage is applied to the gate, the electrons are attracted to the gate and form a conductive channel between the source and drain. The current then flows through the channel and is controlled by the gate voltage.
The SSM3K309T(TE85L,F) also has a low gate charge, a low input capacitance, and a low gate to source leakage current. This makes it suitable for applications that require low power and high speed switching. It is especially useful in high speed, high current switching applications, where switching losses must be kept to a minimum.
The SSM3K309T(TE85L,F) is also available in a number of different packages, including a SIL (Surface Mounted Inductor) package, a DIP (Dual In-line Package) package, and a Dual Gullwing (DG) package. These packages offer various levels of electrical performance, including switching speeds and power handling capability.
The SSM3K309T(TE85L,F) is well-suited for a wide range of applications due to its low on-resistance, low gate charge, and low input capacitance. It is a valuable component for use in switching regulators, motor and fan control, and electronic loads. Furthermore, its small size facilitates efficient use in a variety of packaging options.
The specific data is subject to PDF, and the above content is for reference
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