Allicdata Part #: | SSM3K316T(TE85LF)TR-ND |
Manufacturer Part#: |
SSM3K316T(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 4A TSM |
More Detail: | N-Channel 30V 4A (Ta) 700mW (Ta) Surface Mount TSM |
DataSheet: | SSM3K316T(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 10V |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 4V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSM |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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SSM3K316T (TE85L,F) is a high-performance N-Channel MOSFET designed using STMicroelectronics’ advanced VIPower MOSFET Technology.This technology to combine the advantages of low gate charge and low equivalent on-resistance (or RDSon) making this component suitable for all kinds of applications involving high current, high frequency switching and high voltage power switching.
SSM3K316T (TE85L,F) uses a single N-channel MOSFET to provide excellent performance in power switching applications. This component is able to handle high current and voltage and provides an improved resistance for better efficiency and lower power dissipation. This component also offers excellent EMC/thermal performance and low operating temperature.
One of the most common applications of this component is power switching. This component is used mostly in DC-DC converters, where it reduces conduction losses and improves the efficiency and power density of the converter. This component is also used in motor drives, where it provides high speed switching, low switching losses and improved startup performance.
Another application of this component is power supply design, where it can reduce switching losses in the PWM controller to improve the efficiency of the power supply. This component is also used in communications systems, where it provides improved switching speed, low losses, and good EMC/thermal performance.
The working principle of the SSM3K316T (TE85L,F) is simple. It operates in two modes: OFF state and ON state. In the OFF state, the gate voltage is below the threshold voltage and no current flows through the MOSFET. When the gate voltage is greater than the threshold voltage, the MOSFET enters the ON state and current flows through it.
The ON state resistance of this component is very low, typically less than 1 ohm. This improves the efficiency of the circuit and reduces power losses. This component is rated to handle a maximum voltage of 100V and a maximum current of 15 A, making it suitable for high power applications.
The SSM3K316T (TE85L,F) is a high-performance N-Channel MOSFET and has been designed to provide excellent performance in power switching and power supply design applications. It has a low gate charge and low RDSon resistance, excellent EMC/thermal performance, and low operating temperature. It works on the simple principle of ON and OFF state and is capable of reliably handling high current and voltage, making it an ideal choice for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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