Allicdata Part #: | SSM3J15FULFTR-ND |
Manufacturer Part#: |
SSM3J15FU,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 30V 0.1A USM |
More Detail: | P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM3J15FU,LF Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.02999 |
Vgs(th) (Max) @ Id: | 1.7V @ 100µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9.1pF @ 3V |
Vgs (Max): | ±20V |
Series: | π-MOSVI |
Rds On (Max) @ Id, Vgs: | 12 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SSM3J15FU,LF is a 3A, 15V, N-Channel enhancement-mode Field Effect Transistor (FET). This type of FET is an insulated-gate type device, which uses the electric field between the gate and channel to control the flow of current through the transistor. This FET is manufactured using specialized technologies, which allow for superior performance compared to other devices.
These devices are used in a wide range of applications, including power switching, voltage and current sensing, analog signal amplification, digital logic level control/detection and drivers, among others. The SSM3J15FU,LF can be used to replace other devices in these same applications, allowing for reduced power dissipation, noise, and cost.
In terms of power switching, this type of FET can provide excellent performance in applications including DC to DC converters, motor control, and power amplifiers. The device\'s channel is normally in the off state, due to the presence of a DC gate-source voltage, but this can be changed, depending upon the applied signal. If a positive signal is applied to the gate, which then turns the device on, and a current is established through the channel. This current can then be used to power whatever load is connected to the device.
In voltage and current sensing applications, this type of FET can be used to create a voltage controlled current source. By applying a voltage to the gate, the amount of current that can flow through the device can be regulated. This type of device can be used for a variety of applications, including regulating the output of a power supply, controlling the speed of an electric motor, or sensing changes in voltage or current levels.
In terms of analog signal amplification, the SSM3J15FU,LF is capable of providing gain with very low input current and provides fast slew rates. This makes the device ideal for applications such as low-noise signal amplifiers, or precision signal conditioning. The device\'s small size makes it ideal for integrated circuits where space is limited.
For digital logic level control/detection, the device is capable of providing a low-power, low-voltage solution for logic level designs. The device\'s logic-level threshold can be controlled using an applied gate voltage, and the output of the device will be determined by the logic level of the input signal. This makes the device ideal for switch debouncing, level shifting, and more.
Finally, this type of FET can also be used as a driver, where it can be used to provide additional drive current to a load. The device\'s low-power operation makes it ideal for driving a wide range of loads, from small LEDs to large motors. The device\'s switching speed and low input current also make it a good choice for applications such as pulse-width modulators and voltage-controlled oscillators.
In conclusion, the SSM3J15FU,LF is a versatile Field Effect Transistor, capable of being used in a wide range of applications. Its low power operation, small size, excellent performance, and low input current all make it an attractive choice for many applications where performance and efficiency are important.
The specific data is subject to PDF, and the above content is for reference
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