SSM3K15AMFV,L3F Allicdata Electronics

SSM3K15AMFV,L3F Discrete Semiconductor Products

Allicdata Part #:

SSM3K15AMFVL3FTR-ND

Manufacturer Part#:

SSM3K15AMFV,L3F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 0.1A U-MOS III
More Detail: N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: SSM3K15AMFV,L3F datasheetSSM3K15AMFV,L3F Datasheet/PDF
Quantity: 47000
8000 +: $ 0.03043
Stock 47000Can Ship Immediately
$ 0.04
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Package / Case: SOT-723
Supplier Device Package: VESM
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Vgs (Max): ±20V
Series: U-MOSIII
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SSM3K15AMFV,L3F Application Field and Working Principle

The SSM3K15AMFV,L3F is a medium-power, low-voltage vertical DMOS FET used in power management and switching applications. The SSM3K15AMFV,L3F is a vertical field effect transistor (FET) constructed with a N-channel vertical DMOS feature of silicon-controlled rectifier (SCR) technology. The set of these two components, the top and bottom gates, is the key to the functionality of this FET. This type of FET is designed to provide higher current levels than standard FETs and is often used in power supplies and other applications that require high current or high power switching.

The main components of SSM3K15AMFV,L3F are the vertical DMOS, the source and the drain. The source is connected to the drain on the other side of a P-type conductive layer and this is the key to the functionality of this FET. The source of the SSM3K15AMFV,L3F is generally connected to a positive potential. When an electric field is applied to the P-type conductive layer, the electrons escape from the N-type conductive layer and run through the gate of the FET and form a current flow between the gate and the drain. This current is then used to turn on and off the SSM3K15AMFV,L3F FET. The gate terminal is grounded when the FET is turned off and a positive charge is applied to the gate when the FET is turned on.

The SSM3K15AMFV,L3F is used in a wide range of applications, including automotive, aerospace, medical, and consumer electronics. The SSM3K15AMFV,L3F can be used for DC-DC conversion, DC-AC conversion, voltage regulation, and power topology design. For example, in power supplies, the SSM3K15AMFV,L3F can be used to regulate the voltage or current in a power system, as well as provide a high current-switching capability. The device also offers very low on-resistance, high power density, and low noise operation.

In addition to its applications in power supplies, the SSM3K15AMFV,L3F is also widely used in motor control and driver circuits. The FET can switch the motor control signals on and off based on the applied voltage and can provide very high power levels. The SSM3K15AMFV,L3F is also used in robotics, medical equipment, and industrial automation systems.

The application of the SSM3K15AMFV,L3F also includes in audio amplifiers. The FET can be used to regulate the amount of power output from the audio amplifier, as well as to regulate the output signals from the amplifier. The device can also be used to provide protection from overtemperature, and overcurrent conditions. Additionally, the device can be used to provide a low-distortion sound output from the audio amplifier.

In summary, SSM3K15AMFV,L3F is a medium-power, low-voltage vertical DMOS FET used in power management and switching applications. The SSM3K15AMFV,L3F is equipped with a vertical field effect transistor construction, featuring top and bottom gates. The SSM3K15AMFV,L3F is designed to provide higher current levels than standard FETs and is suitable for a wide range of applications, including power supplies, motor control, and audio amplifiers. The device offers very low on-resistance, high power density, and low noise operation.

The specific data is subject to PDF, and the above content is for reference

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