Allicdata Part #: | SSM3K16FULFTR-ND |
Manufacturer Part#: |
SSM3K16FU,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 0.1A USM |
More Detail: | N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM3K16FU,LF Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.03666 |
Vgs(th) (Max) @ Id: | 1.1V @ 100µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9.3pF @ 3V |
Vgs (Max): | ±10V |
Series: | π-MOSVI |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A SSM3K16FU,LF (commonly referred to as a FET), is a semiconductor device typically used in an analog or digital circuit. A FET is a versatile device with a variety of uses, such as bi-directional switching, signal amplification and filtering, low-noise voltage clamps, and high-current conduction. It is composed of an active region of semiconductor material (usually silicon or a combination of silicon and germanium) sandwiched between two plates of inorganic insulator, known as the source and drain electrodes. The electrical properties of FETS are determined by the material that is used to construct the semiconductor material. The most common materials used for FETs are indium phosphide, gallium arsenide, zinc oxide, and gallium nitride.
A Single SSM3K16FU,LF is a type of FET which consists of only one active region of semiconductor material, rather than two. It is therefore considered an inexpensive, low-power option for applications which require only single-stage switching, or a single bi-directional switch. The operating principles of single FETs are quite simple. When a voltage is applied across the source and drain electrodes, current flows from source to drain, or vice versa, depending on the applied polarity. This principle is used in various analog and digital circuits for various applications such as sensing, buffering, voltage regulation and power conversion.
One of the most common applications for single FETs is in audio amplifiers, in which the device is used to amplify audio signals from small microphone signals to powerful speakers. It is also used in a large number of power conversion and motor control applications such as power supplies, converters, inverters and motor speed controllers. Single FETs are also used in RF (Radio Frequency) applications such as wireless communication, GPS receivers and wireless charging systems.
Single FETs are popular in the automotive, aerospace and industrial fields, where they are used in powertrain, fuel injection and EMIs (Electromagnetic Interference) control circuits. Additionally, single FETs are used in medical and scientific instrumentation, as well as in robotic and computerized systems where the FET helps to control the various components and functions. In all of these applications, the single FET helps to ensure the proper operation of the device.
Single FETs are used in variety of analog, digital, power and RF applications due to their unique ability to amplify, generate and control electrical signals. They can operate at high-voltage and high-frequency, making them ideal for use in power conversion and motor control applications. Furthermore, their low-power consumption, small size and low-cost make them attractive for use in various applications. As such, single FETs continue to be a valuable, efficient and versatile device.
The specific data is subject to PDF, and the above content is for reference
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