Allicdata Part #: | SSM3K315T(TE85LF)TR-ND |
Manufacturer Part#: |
SSM3K315T(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 6A TSM |
More Detail: | N-Channel 30V 6A (Ta) 700mW (Ta) Surface Mount TSM |
DataSheet: | SSM3K315T(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | U-MOSIV |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 27.6 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.1nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSM |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Description
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The SSM3K315T (TE85L,F) is a type of Field-Effect Transistor (FET). It belongs to the class of single (i.e., one-channel) n-channel MOSFETs. The SSM3K315T (TE85L,F) is a high-voltage and high-current FET, rated to handle a maximum drain-to-source voltage of 300V and current of 12A.The working principle of the SSM3K315T (TE85L,F) stems from the physics of the semiconductor material on which it is based. The FET is constructed out of a semiconductor material, typically silicon, which has an intrinsic electron mobility or the so-called "carrier mobility". This is the property of the material which enables it to transport charge between different parts of the device. This charge transportation allows the FET to electronically regulate the voltage and current flow between the source and drain of the device.The SSM3K315T (TE85L,F) is designed to be operated in a given temperature range, typically around 0 to 75°C. This temperature limit is necessary given the physical constraints of the semiconductor material. As the temperature rises above this limit, the device\'s performance can degrade, leading to a poor performance.The SSM3K315T (TE85L,F) can be used for a wide range of applications. It can be used in high-voltage and high-current circuit designs, such as in automotive electronic systems, high-frequency power supplies, and certain telecommunications systems. Additionally, the device can be used in power management and circuit protection designs due to its ability to limit the drain current. It can also be used in logic-level switching applications, such as in computer or microprocessor circuits, as well as in analog applications, like in audio amplifiers.The SSM3K315T (TE85L,F) is a versatile device with many uses across a wide range of applications. It provides excellent performance and stability in a wide variety of electrical and temperature conditions. In addition to its good overall performance, it is relatively cost-effective, making it an attractive choice for projects and systems where the cost-performance ratio is of utmost importance.The specific data is subject to PDF, and the above content is for reference
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