STD46N6F7

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1065pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	STripFET™
Rds On (Max) @ Id, Vgs:	14 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

STD46N6F7 is an N-channel enhancement mode power MOSFET that is well suited for a wide range of applications. It has a high current transfer ratio, low on-resistance and is designed for high-speed switching, which makes it ideal for power conversion systems. It is offered in standard packages to suit a variety of applications and is ESD-protected up to 8kV.

Application fields and working principle

MOSFETs are used in a variety of applications, including power conversion, high-speed switching, amplifier circuits, radio-frequency amplifiers and audio amplifiers. They are used in circuits that require high current and/or high voltage, in order to provide the necessary switching power. In these applications, the MOSFET can reach high speeds with low on-resistance, reducing power loss and improving efficiency.The STD46N6F7 has a threshold voltage of 6V and an on-resistance of 13mΩ @ 10V. This makes it an ideal choice for a variety of applications as it can reduce power loss in power conversion systems and switching applications.The working principle of MOSFETs is based on the movement of electrons between a source and a drain. A gate voltage is applied between the source and the body of the MOSFET. This creates a field in the substrate of the MOSFET, which “pushes” electrons across the channel between the source and the drain. This current is then amplified as it passes through the gate, producing a greater current.The STD46N6F7 has a Schottky diode attached to the source which helps to protect the device from reverse current. It is also fitted with an ESD-protection circuit, which protects it from static electricity.

Conclusion

The STD46N6F7 is a high-performance N-channel enhancement mode power MOSFET with low on-resistance and is suitable for a variety of applications. It has a high current transfer ratio and is designed for high-speed switching, making it ideal for power conversion systems. Its Schottky diode attachment and ESD-protection circuit also ensure stable operation and a longer lifespan.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description