STD4N80K5 Allicdata Electronics
Allicdata Part #:

497-14033-2-ND

Manufacturer Part#:

STD4N80K5

Price: $ 0.57
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 3A DPAK
More Detail: N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK
DataSheet: STD4N80K5 datasheetSTD4N80K5 Datasheet/PDF
Quantity: 7500
1 +: $ 0.57000
10 +: $ 0.55290
100 +: $ 0.54150
1000 +: $ 0.53010
10000 +: $ 0.51300
Stock 7500Can Ship Immediately
$ 0.57
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD4N80K5 is a part of the STripFET F7 Power MOSFET family made by STMicroelectronics. It is a vertical double diffused N-channel MOSFET with a maximum current rating of 8A and a breakdown voltage of 400V.

The maximum drain current at 25°C is 8A and the gate-source voltage range is from -3 to +7V. The RDS(on) drop voltage is 18mOhm at 8A. The total gate charge is 12nC and the gate capacitance is 33nF.

The STD4N80K5 has an avalanche energy rating of 10mJ and an avalanche current of 37A. It also has an efficiency of 99.3% when used in DC-DC converters. It is also heat-resistant with a maximum temperature of 175°C.

The STD4N80K5 can be used in a variety of applications including power supplies, DC-DC converters, motor drives, inverters, solenoid and valve controls, and so on.

The working principle of this power MOSFET is to reduce the voltage of the power supply line by passing only a portion of it as defined by the gate charge. The gate voltage of the MOSFET controls the current flowing through it. When a lower gate voltage is given, the current through the MOSFET is reduced. When a higher gate voltage is given, the current through it is increased.

The MOSFET works by transferring majority carriers from the source to the drain. When the gate voltage is increased, the gate-source voltage threshold is crossed and the N-channel MOSFET is a current-controlled device. When the gate voltage is decreased, the current flowing through the MOSFET is reduced.

In DC-DC Converters, the STD4N80K5 acts as an ideal current-controlled device, which can reduce the voltage of the power supply line without causing too much heat generation. It helps to reduce the total power dissipated in the system, resulting in improved efficiency and increased power output.

The STD4N80K5 is a versatile MOSFET that can be used in a variety of installations ranging from low-power to high-power DC-DC converters. Its low RDS(on) drop and high efficiency make it a great choice for any application that needs efficient power handling.

In conclusion, the STD4N80K5 is a high-performance N-channel vertical double diffused MOSFET that offers reliable and efficient power handling in a wide range of applications. Its impressive features make it an excellent choice for those looking for improved performance in their DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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