Allicdata Part #: | 497-16035-2-ND |
Manufacturer Part#: |
STD4NK100Z |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1000V 2.2A DPAK |
More Detail: | N-Channel 1000V 2.2A (Tc) 90W (Tc) Surface Mount D... |
DataSheet: | STD4NK100Z Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 1.05995 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 601pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | Automotive, AEC-Q101, SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 6.8 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD4NK100Z is a advanced power MOSFET that enables higher current levels compared to its predecessors and provides a extremely low on-resistance. It is an epitaxial device that is rated for the logic level voltage of the conventional power MOSFET and is the perfect solution for the power applications under conditions of high speed switching, low loss and low noise. Its structure and construction offers an excellent performance at low voltages, making it ideal for applications such as DC/DC convertors, power regulators andhigh current switching.
The working principle of the STD4NK100Z is based on the field effect-transistor principle. This is a device which is formed by three electrical contacts called source, drain and gate. The application of electric field created by the gate onto the channel underneath create a variation in the electrical charge, causing resistance along the channel to be modulated. The current passing between the source and the drain is therefore controlled by the amount of electric charge passing throught the gate. Therefore, the MOSFET can be used to switch or amplify signals, or both, depending on the requirements of the application.
The advantage of the STD4NK100Z is that it consumes almost no power in its off state, by virtue of the fact that very little charge is required to switch the device from its off state to its on state. This makes it ideal for power applications where energy saving is a paramount factor.
A typical application field for the STD4NK100Z is a DC/DC convertor, as this device is able to perform such tasks efficiently at low input voltages. In a DC/DC convertor, a voltage source such as a battery needs to be regulated and converted to a different level of form of current or voltage, depending on the required output. This can be done by using MOSFETs, to control and regulate the voltage level and current flow. In this application, the STD4NK100Z is well suited, as it is able to handle high current levels without dissipating too much heat, and thus enabling high efficiency.
Other possible applications of the STD4NK100Z include power regulators, current and voltage dividers, power switches and amplifiers. In these applications, the device is used to control current and/or voltage levels, regulate switching frequencies, providing gain, filtering and noise reduction, as well as providing over-current and over-voltage protection.
In summary, the STD4NK100Z is a advanced power MOSFET, suitable for applications such as DC/DC convertors and power regulators, among others. It operates according to the field effect transistor principle, being able to modulate the source-drain current by means of the electric field applied on the gate. Moreover, it requires very low electrical charge to switch from its off to its on state, making it ideal for power applications where energy saving is a concern.
The specific data is subject to PDF, and the above content is for reference
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