STD4NK60Z-1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STD4NK60Z-1 is an insulated-gate bipolar transistor (IGBT) semiconductor device commonly used for switching and power applications. It is a unipolar device which consists of two metal-oxide-semiconductor field-effect transistors (MOSFETs) and a single layer of lightly dopedp-type substrate, normally referred to as the gate channel. It is a key component of common electrical and electronic devices such as power supplies, motor controllers, and Variable Frequency Drives (VFDs).

This type of IGBT is advantageous due to its low power handling and switching capabilities, ease of installation and compact size. It is particularly useful in applications where energy efficiency and cost are determining factors.

The STD4NK60Z-1 IGBT has a maximum voltage rating of 800 volts and a maximum drain-source on-state resistance of only 4 ohms. It is designed to run at high switching speeds, up to 10 kHz and can be switched on and off in less than 2 microseconds. In addition, the device has a rated thermal resistance of 25°C/W and an overall noise immunity of up to 50 dB.

The STD4NK60Z-1 IGBT has a low gate-emitter capacitance of only 35pF. This low capacitance allows for quick switching of the device during high-speed operation. As such, it can be used for high-speed repetitive commands, such as pulse-width modulation (PWM). It is suitable for a range of industrial applications, including motor control, frequency regulation, energy saving, and voltage regulation.

The working principle of the device is relatively simple. An input current flows through the gate channel, drawn from a control circuit, causing electrons to be injected into the channel. This creates an inversion layer with a high electric field at the channel-gate junction. This increases the electrical conductivity of the channel, allowing the device to conduct current.

The drain and source contacts are formed at the terminals of the gate channel, in a conventional MOSFET structure. The junction is of the two-terminal type, with a drain-gate and a source-gate junction. When the gate voltage is increased, carriers (electrons and holes) spontaneously move from the drain to the source. This creates a voltage between the two contacts, which results in a conduction current. By controlling the voltage at the gate, the amount of current conducted from the drain to the source can be regulated.

In summary, the STD4NK60Z-1 insulated-gate bipolar transistor (IGBT) semiconductor device is extremely useful in a range of industrial applications. It has a low power handling and switching capability, improved noise immunity, and a high switching speed. It is made up of two metal-oxide-semiconductor field-effect transistors (MOSFETs) and a lightly doped p-type substrate. The device works by having an input current flow through the gate channel, creating an inversion layer which increases the electrical conductivity of the channel. The resulting conduction of current through the drain and source contacts can be regulated by controlling the gate voltage.

The specific data is subject to PDF, and the above content is for reference