STD4NK50Z-1

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The STD4NK50Z-1 is a single pole, normally closed type, surface mount switching FET. It is ideal for use in low voltage, low noise applications, such as power supplies and battery chargers. The STD4NK50Z-1 is part of a series of FETs, manufactured by STMicroelectronics, that offer a low R_DS(on), a low input capacitance, and a fast switching time, making it an excellent choice for switching applications.

A field effect transistor (FET) is a type of transistor that rely on the voltage applied to its gate in order to control the current passing through the device. FETs are divided into two categories, depletion-type and enhancement-type.

The STD4NK50Z-1 is an enhancement-type FET, which means that the gate of the device is positively biased in order for current to pass through the device. This FET also has an integral anti-parallel diode, which allows for the smooth switching of current between the source and the drain. The diode also helps prevent damage to the device during negative voltage transients.

The STD4NK50Z-1 is constructed with a special isolation layer that prevents gate capacitance from impacting device performance. This layer, called the Super Junction layer, also helps reduce leakage current and improve total gate charge performance.

The STD4NK50Z-1 also features an integrated ESD protection diode, which enhances the device’s ESD durability to at least 8kV HBM. Additionally, its low on-resistance helps ensure that it is not affected by the electrostatic discharges commonly seen in high-speed switching applications.

The STD4NK50Z-1 is ideally suited for use in low voltage, low noise applications such as power supplies, battery chargers and automotive applications. It is also suitable for use in high frequency switching applications due to its low gate capacitance and low parasitic resistance. The STD4NK50Z-1 can easily be used with other MOSFETs to provide a compact and efficient switching solution.

In summary, the STD4NK50Z-1 is a single pole, normally closed switching FET suitable for use in low noise and low voltage applications. It offers excellent ESD protection, low on-resistance, and low gate capacitance performance, making it an excellent choice for a variety of applications. The Super Junction isolation layer helps reduce leakage current and improve total gate charge performance, while the integrated anti-parallel diode helps provide smooth current switching and protection from negative voltage transients. Overall, the STD4NK50Z-1 is a reliable and efficient FET for a variety of applications.

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