Allicdata Part #: | 497-5105-2-ND |
Manufacturer Part#: |
STD4NK50ZD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 3A DPAK |
More Detail: | N-Channel 500V 3A (Tc) 45W (Tc) Surface Mount DPAK |
DataSheet: | STD4NK50ZD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD4NK50ZD is a member of the family of N-channel enhancement mode MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) from STMicroelectronics. It is a three terminal device featuring low on-resistance and fast switching speed. These features combine to make this FET an ideal choice for a wide range of applications in the consumer, industrial, computing, and communications industries.
The basic design and working principle of an N-channel MOSFET is fairly straightforward. The three terminals of the device are the source, gate, and drain, as labeled on the package. A positive voltage applied to the gate relative to the source provides an electric field that attracts charge carriers (electrons or holes) from the source to the drain and forms an inversion layer. This layer behaves like a resistor, such that when the gate voltage is increased, the drain current increases. Conversely, when the gate voltage is decreased, the drain current decreases. The amount of current that passes through the device is determined by the size of the electric field, which is controlled by the gate voltage.
Application Fields:
The STD4NK50ZD can be found in a wide variety of electronic equipment in the consumer, industrial, computing, and communications industries. Its low on-resistance and fast switching speed make it an ideal candidate for controlling power and current in applications such as motor control, inverters, converters, and low-voltage power supplies.
Due to its robust physical characteristics and ability to withstand high peak currents, the device is also suitable for high-current switching and rectification applications. The STD4NK50ZD lets all the power electronics involved in those applications be designed in a much smaller form factor than with alternate FETs. It also allows for increased efficiency and better system performance, as well as enhanced long-term reliability.
The device also lends itself well to applications such as DC-DC converters, LCD backlighting, LEDs, and AC-DC supplies, which often require voltage ratings of 100V or higher. In addition, its high number of available configurations makes it suitable for high-speed computer and communications systems, as well as for power electronics projects in the automotive and aerospace industries.
Working Principle:
As mentioned previously, the basic design and working principle of an N-channel MOSFET is fairly straightforward. As previously stated, when a positive voltage is applied to the gate relative to the source, an inversion layer is formed and current begins to pass. When the gate voltage is increased, the drain current increases, and when the gate voltage is decreased, the drain current decreases.
The amount of current that passes through the device is determined by the size of the electric field, which is controlled by the gate voltage. This current can be alternatively referred to as the "drain to source current" or the "drain current", depending on which pin is being referenced. The amount of current that passes through the device is also affected by the device\'s temperature, as well as by any resistive components in its environment.
In addition, the magnitude of the electric field formed between the gate and source terminals is dependent on the voltage across the device, so the drain current flowing through the device is dependent on its applied voltage as well. The device will begin to conduct at a certain gate-to-source threshold voltage and then increase linearly with increasing voltage until it reaches its saturation voltage, at which point the drain current will stay constant.
As with other power MOSFETs, the STD4NK50ZD is designed to dissipate the heat generated by its operation. This can be accomplished by mounting the device onto an appropriate heat sink, as well as selecting a suitable package style, that allows the greatest amount of thermally conductive surface area to transfer the heat away from the device and into the ambient environment.
The specific data is subject to PDF, and the above content is for reference
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