STD47N10F7AG

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The STD47N10F7AG is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from STMicroelectronics, a leading manufacturer of semiconductors. The part is a single MOSFET, which is typically used in a variety of applications, including signal switching and level shifting, signal control, and power switching.

The STD47N10F7AG has a drain-source rating of 47V, a drain-gate voltage rating of 20V, and a 0.13Ω on-resistance. Additionally, the transistor features excellent protected ESD (electrostatic discharge) capabilities, making it suitable for applications that require operation under high levels of voltage and/or electromagnetic interference.

The systematic working principle behind the STD47N10F7AG lies in its unique structure. Its body is constructed from a special material—a pentagonal matrix of hafnium and silicon vertical nanotube technology—which is engineered to maximize power output, speed, and efficiency. The device itself consists of a source electrode connected to a drain electrode and a gate electrode, each of which is connected to a separate terminal. Once power is applied, the MOSFET creates an electric field between the source and drain electrodes. This creates an electrical current flow through the device, allowing for the desired signal switching and power control.

Among the key benefits that the STD47N10F7AG provides is a superb ESD protection level. The device features an internal electrostatic-discharge (ESD) diode structure that is designed to protect the circuits from high-voltage spikes in sensitive electrical equipment, such as computers, smartphones and tablets. Furthermore, the device offers some of the fastest switching-on times available, with a maximum ratings of 100MHz, perfect for use in high-speed circuit applications.

In addition to being a superior transistor, the STD47N10F7AG also offers unparalleled ease of use, with built-in flexibility for a wide range of applications, making it an ideal choice for those who need a dependable MOSFET. The device is available with a wide range of drain-source and gate-source voltages, allowing custom voltage adjustments for specialized applications such as high-voltage systems. The device can easily be connected to the existing circuit within a few minutes, and requires relatively low maintenance in the long run.

In conclusion, the STD47N10F7AG is a highly-efficient single-channel MOSFET designed specifically for use in a variety of applications. Its metal oxide semiconductor construction ensures fast switching, an incredibly low on-resistance, and exceptional ESD protection, making it a perfect choice for high-speed, high voltage, and sensitive electrical systems. With its wide range of drain, source and gate-source voltages, and its user-friendly installation requirements, the STD47N10F7AG is the perfect choice for anyone looking for reliable single-channel MOSFET.

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