STD4NS25T4

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Introduction

A ST4NS25T4 is a metal-oxide-semiconductor field-effect transistor(MOSFET) specifically engineered for applications requiring a high-speedand low-power switching device solution. It provides an ideal balancebetween power dissipation, input capacitance, and gate capacitance. It isalso a single device which makes it suitable for applications with limited board space.

Device Description

The ST4NS25T4 is a 3-terminal vertical MOSFET (Field-Effect Transistor)with a 20V drain-source breakdown voltage. It is designed with a highperformance N-channel MOSFET process optimized for extremely low drainresistance and fast switching time. With low resistive losses,reduced current consumption and high efficiency, it is ideal for highspeed power switch applications. The built-in “Miller Capacitance” alsohelps reduce EMI, which is an important consideration in power switchingapplications.

Device Features and Benefits

• High Drain-Source breakdown voltage: 20V
• Low drain capacitance: 40pF
• Low on-resistance: 0.18Ω
• High switching speed: 4.4ns
• Long term stability: High
• Reverse recovery time: 5.2ns

Application Areas

The ST4NS25T4 is suitable for applications where fast power switching andlow power dissipation are of primary importance. It is most commonly usedin power control systems, lighting, automotive, and security applicationswhere high speed and efficiency are critical.

Working Principle

The MOSFET works by using a voltage applied to the gate electrode tocreate an electric field which then controls the flow of electronsacross the MOSFET channel. When a voltage is supplied to the gateelectrode, a gate-source voltage is created which creates an electricfield. The electric field then varies the conductivity of the MOSFETchannel which is dependent on the amount of voltage applied to the gateelectrode. This changes the resistance between the source and drainterminals and the current flow through the channel is controlled. Whenthe voltage applied to the gate electrode is at 0V, the electric fieldwill cause the channel resistance to be near infinity, hence no currentwill pass through the device.

Conclusion

The ST4NS25T4 is an ideal choice for fast power switching applicationsthat require low input capacitance, low gate capacitance, and low powerdissipation. Its built-in Miller capacitance helps reduce EMI, and itcan operate in a wide range of temperatures. Furthermore, its longterm stability and low reverse recovery time make it an ideal choice forhigh speed switch applications requiring power efficiency and low powerconsumption.

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