STD4N90K5

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The STD4N90K5 is a general-purpose N-channel enhancement-mode Field-Effect Transistor (FET) derived from jFET technology, featuring extremely low on-resistance. This versatile device has high input impedance, low gate drive requirements and exceptionally low Saturation (drain–source) Resistance (R_ds) between drain and source pins. Furthermore, it offers superior electrical performance in terms of switching performance, conduction speed and package efficiency in a compact package.

The device is primarily intended for power management and general-purpose applications, such as motor controllers, linear regulators and battery chargers, as well as for Pulse-width Modulation (PWM) applications in the automotive, consumer, wireless and industrial segments. It is suitable for use in various automotive and consumer applications, from DC and low-frequency switching to high current application with enhanced efficiency.

Application Field

The STD4N90K5 has a wide range of application fields, as it can be used as a switch, amplifier or for signal conditioning. The device is suitable for power management, motor controller, linear regulators and battery chargers, as well as for PWM applications. In automotive applications, it offers superior versatility and efficiency in the switching of DC and low-frequency signals, while in consumer applications, it can be used to condition audio signals, control temperature or provide precision voltage regulation. In the industrial segment, the device can be used in automation and robotics applications, providing superior power efficiency and reliability. Additionally, it can be used in fast-switching applications, such as PWM controllers.

Working Principle

The STD4N90K5 is an N-channel FET, which works on enhancement mode, meaning that the transistor is switched ON when voltage is applied to its gate. The amount of voltage applied determines how much current flows through the drain-source channel. The device is made up of a thin strip of polycrystalline silicon connected between the source and drain pins, which acts as a gate. When a voltage is applied to the gate, it creates an electric field, which modifies the electrical properties of the drain-source channel. This electric field modulates the conductivity of the channel, thus enabling or disabling the flow of current between the drain and source pins depending on the amount of voltage applied.

The STD4N90K5 has an R_ds of 0.9Ω, making it ideal for power management. In addition, its high input impedance and low gate drive requirements make it very suitable for use in high-frequency switching applications. Furthermore, the device is capable of handling up to 9A of continuous drain current, providing superior performance in terms of power efficiency and reliability.

The STD4N90K5 is a versatile N-channel enhancement-mode Field-Effect Transistor (FET) with a wide application field. It has low on-resistance, ideally suited for power management and general-purpose applications, such as motor controllers, linear regulators and battery chargers, as well as for PWM applications. Its superior electrical performance makes it suitable for DC and low frequency switching applications, as well as for fast switching applications. The device is capable of handling up to 9A of continuous drain current and it has an R_ds of 0.9Ω, enabling efficient power management.

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