Allicdata Part #: | 497-10647-2-ND |
Manufacturer Part#: |
STD4N52K3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 525V 4.4A DPAK |
More Detail: | N-Channel 525V 2.5A (Tc) 45W (Tc) Surface Mount DP... |
DataSheet: | STD4N52K3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 334pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 525V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD4N52K3 is a single, field effect transistor. It is typically used for switching and amplifying digital logic signals. The STD4N52K3 utilizes MOSFET technology, a type of field effect transistor. The MOSFET, or metal oxide semiconductor field effect transistor, is a type of transistor that is rapidly growing in popularity due to its high performance, small size, and low cost.
The STD4N52K3 has many advantages over standard bipolar transistors. Bipolar transistors tend to have higher current carrying capacity than the STD4N52K3, but they also produce more heat and are less efficient. The MOSFET technology used in the STD4N52K3 allows it to have much lower input power consumption and better frequency response characteristics than bipolar transistors.
The basic operation of a single MOSFET involves three terminals, the gate, drain, and source. The gate is used to control the current flowing between the drain and the source. The MOSFET consists of two p-type and one n-type semiconductor layers. When a positive voltage is applied to the gate terminal, it creates an electric field across the channel and forms a channel region between the source and drain. This allows current to flow between the source and the drain, controlled by the voltage applied to the gate terminal.
The STD4N52K3 has a maximum drain current of 2.5 Amps and a maximum gate threshold voltage of 2 Volts. It is rated for a maximum drain to source voltage of 50 Volts, and has a total gate charge of 10 nC. It also has a maximum power dissipation rating of 2 Watts. The STD4N52K3 can be used as an amplifier, level shifter, voltage regulator, or switch in order to provide functionality and control in many types of digital circuit designs.
The STD4N52K3 can be used as a switch in many digital circuits as it can be turned on and off quickly with very little power consumption. It can also be used in circuits needing a stable operating point, such as a voltage regulator. When used as an amplifier, it can amplify signals with a gain of around 100. This allows for larger logic signals, making for more reliable digital circuits.
The STD4N52K3 is a popular choice in many digital circuit designs due to its wide range of features, low power consumption and low cost. Its superior performance, combined with its small size, make it an appealing option in many applications.
The specific data is subject to PDF, and the above content is for reference
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