STD46P4LLF6 Allicdata Electronics
Allicdata Part #:

497-15463-2-ND

Manufacturer Part#:

STD46P4LLF6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 40V 46A DPAK
More Detail: P-Channel 40V 46A (Tc) 70W (Tc) Surface Mount DPAK
DataSheet: STD46P4LLF6 datasheetSTD46P4LLF6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3525pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
Series: STripFET™ F6
Rds On (Max) @ Id, Vgs: 15 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A Static Induction Transistor, or SIT, is an electronic semiconductor device that is part of the Field Effect Transistor (FET) family. The type of FET referred to as the STD46P4LLF6 is a MOSFET, or metal-oxide-semiconductor field-effect transistor. The STD46P4LLF6 acts as a switch or amplifier and uses an insulated metal gate to electronically control the flow of current from a source to a drain.

The STD46P4LLF6 has been specifically designed for a wide range of applications including medical imaging, power control and amplification, and is suitable for both low and moderate power MOSFET applications. In addition, this particular FET is one of the few that are RF capable, which makes it suitable for use in a variety of radio frequency (RF) applications.

The STD46P4LLF6 is a monolithic structure in which the source, body and drain of the transistor are formed in one piece. This means that all components are contained in a single housing, reducing the complexity of the device and making it easy to use. This MOSFET has two distinct operating modes: Enhancement and Depletion. These two modes are activated by the control voltage supplied to the gate terminal. When the gate voltage is high, the transistor is in the Enhancement mode and when the gate voltage is low, the transistor is in the Depletion mode.

The working principle of the STD46P4LLF6 is based on the application of an electric field to the gate of the transistor, which controls the current flow. This field is what sets the transistor into the respective operating modes. The transistors current flow depends on the threshold voltage, which is the voltage that needs to be applied to the gate terminal to turn on the transistor. The Drain-Source voltage (VDS) and the on-state resistance are also dependent on this threshold voltage.

When in the Enhancement Mode, the gate is a p-type material, which creates a strong inversion layer to allow for current to pass through the channel. This mode is generally used for switching and amplification applications. The Depletion Mode is generally used for load regulation applications and has a stronger gate voltage control. This mode uses a reverse bias voltage between the source and the gate to deplete the free electrons around the source.

The STD46P4LLF6 is a popular choice for a variety of applications due to its wide range of features. It is designed to withstand temperatures up to 110°C, features a fast switching speed, and has low gate capacitance and drain-source capacitance. In addition, this MOSFET has a low on-state resistance and a low gate-source capacitance for enhanced performance.

The STD46P4LLF6 is a highly versatile FET that is suitable for a wide range of applications. With its low power MOSFET capabilities and its ability to be used in radio frequency applications, it is a popular choice for applications such as radio frequency amplifiers, power control and amplification, switching, and load regulation.

The specific data is subject to PDF, and the above content is for reference

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