Allicdata Part #: | 497-5964-5-ND |
Manufacturer Part#: |
STD4NK50ZD-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 3A IPAK |
More Detail: | N-Channel 500V 3A (Tc) 45W (Tc) Through Hole I-PAK |
DataSheet: | STD4NK50ZD-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 310pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STD4NK50ZD-1 is a single N-Channel MOSFET. This type of MOSFET is a four-terminal device that stands for metal-oxide semiconductor field-effect transistor, usually abbreviated as either MOSFET or MOS. Compared to a simple transistor, FETs are known to have better characteristics and low-cost switching solutions. This typically makes them the preferred choice when it comes to a diverse range of applications.
As a single N-Channel MOSFET, the STD4NK50ZD-1 can be applied in power management through the use of controlled switching. It is primarily used to amplify signals with the help of its high switching speed, in the range of 0.55 ns rise time and 0.45 ns fall time. This makes it ideal for applications that require a fast switching time with minimal power consumption. In addition to its power management performance, the STD4NK50ZD-1 also makes it possible to detect even the slightest changes in DC levels, making it very versatile in terms of its application.
The working principle of the STD4NK50ZD-1 can be divided into two main parts. First, it employs a metal-oxide field effect that functions as the main gate for the MOSFET. Inside the gate lies a thin layer of gate material, usually silicon dioxide or silicon nitride, which acts as insulation and prevents current from passing through it. With the help of this gate, the FET holds off current by blocking any negative influences from outside sources.
Secondly, the FET works by slightly changing the electric field between the source and drain of the MOSFET when the voltage is applied to the gate. This modifies the electrical resistance between these two points, allowing electrons to flow through the metal inside the transistor. This ultimately allows current to be switched on and off, allowing the STD4NK50ZD-1 to be used as a type of switch.
The STD4NK50ZD-1 is a unique type of single N-Channel MOSFET which makes it an excellent choice for various high power applications. Its high switching speed and power efficiency make it suitable for applications such as smart devices, data communication, automotive, and many others. By combining its low-cost switching capabilities with its power management features, the STD4NK50ZD-1 provides the performer with an optimal and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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