STD60N3LH5

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The STD60N3LH5 is a N-Channel MOSFET, which falls into the category of transistors--FETs and MOSFETs - Single. It provides a wide variety of applications with excellent switching performance characteristics. The STD60N3LH5 is designed to rapidly switch heavy electrical/electronic loads with low gate drive power requirements. The switching speed of this MOSFET makes it suitable for power-supply applications and communications equipment use.

The STD60N3LH5 is a 30V N-channel enhancement-mode power MOSFET with a source–drain current of 60A. It was developed for use in the TO-251 package and features a low on-resistance of 95mΩ at a gate voltage of 10V. Furthermore, this MOSFET has excellent RDS(ON) performance which indicates its ability to control power efficiently. It also has a high breakdown voltage and a low gate charge, reducing power dissipation that is not present in other power MOSFETs.

The working principle of the STD60N3LH5 is based on the phenomenon of the field effect, which is the ability of a transistor to amplify or switch small electrical signals. Essentially, when a voltage is applied to the gate of the MOSFET, this creates an electric field that controls the flow of electrons from the source to the drain. This action allows for very precise control of electricity. The STD60N3LH5 has low on-resistance, so it can allow a greater amount of current to pass through the substrate, resulting in excellent electrical performance.

The STD60N3LH5 is available in power amplifier applications and power conversion applications such as DC–DC converters, AC–DC converters, as well as switch-mode power supplies. It is also used in power distribution and motor control applications, such as motor drivers, multi-phase motor drivers, automotive relays and electric valve actuators. Additionally, this MOSFET is used in telecommunication systems, such as base-stations, xDSL systems and WiMAX systems, where switching speed and low power dissipation are critical factors.

In conclusion, the STD60N3LH5 is an ideal N-Channel MOSFET for low gate drive power requirements and high-speed switching applications. With its low on-resistance, high breakdown voltage and low gate charge, the device is well suited for a wide range of applications such as power amplifiers, power converters, power distribution and motor control, and telecommunication systems.

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