STD65NF06

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	75nC @ 10V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	14 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<p>The <strong>STD65NF06</strong> is a single n-channel logic level power field-effect transistor (FET) designed for low voltage, low resistance and low on-state power dissipation. The device features excellent static dV/dt and dI/dt rating and fast switching. It is intended for DC-DC converters, motor control, sync rectification and Sonar (Soccer) applications.</p><p>The <strong>STD65NF06</strong> is a power FET block of a single transistor. Comprised of a single insulated gate, the device can be used in various applications, including switch mode power supply (SMPS) rectification and high efficiency, low on-resistance synchronous rectification for improved power supply performance. It also features low (VGS = 0.8V) and standard (VGS = 4.5V) gate drive voltages for improved efficiency over conventional silicon power MOSFETs.</p><p>The <strong>STD65NF06</strong> FET operates using a number of parameters, including drain current, drain-source voltage, gate-source voltage, on-resistance and gate charge. With a drain-source breakdown voltage (VDS) of 30V, the device offers excellent 10V overload protection with a low (3mΩ) on-resistance (RDS (ON)) and small total gate charge. It features a range of gate drive voltage, from 4.5V (VGS = 4.5V), to 0.8V (VGS = 0.8V) to 3V (VGS = 3V), making it an excellent choice for low-voltage applications.</p><p>The drain-source current of the <strong>STD65NF06</strong> is limited by the gate-source voltage and the on-resistance. When the voltage applied to the FET is within its operating range, it functions as a switch, controlling electrical current and applying a voltage to the gate to turn the device on and off. When a negative gate voltage is applied to the device, the device is turned off and the current flow is stopped.</p><p>The <strong>STD65NF06</strong> can be used in a range of applications, such as DC/DC converters, motor control, and Sonar (Soccer) applications. It is especially useful in motor control applications due to its low dV/dt and dI/dt ratings and its fast switching capabilities, which prevent electrical current and voltage spikes in the motor control circuit. It is also useful in power supply design due to its low on-resistance and gate charge, as well as its low gate drive voltage.</p><p>In summary, the <strong>STD65NF06</strong> is a single n-channel power FET designed for low voltage, low resistance and low on-state power dissipation. It features excellent static dV/dt and dI/dt rating, fast switching, and low (3mΩ) on-resistance (RDS (ON)). The device is suitable for a range of applications, including switch mode power supply (SMPS) rectification and high efficiency, low on-resistance synchronous rectification for improved power supply performance. For its varying gate drive voltage, from 0.8V to 4.5V, it is an excellent choice for low voltage applications.</p>

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