 
                            | Allicdata Part #: | 497-14983-2-ND | 
| Manufacturer Part#: | STD6N80K5 | 
| Price: | $ 0.74 | 
| Product Category: | Discrete Semiconductor Products | 
| Manufacturer: | STMicroelectronics | 
| Short Description: | MOSFET N-CH 800V 4.5A DPAK | 
| More Detail: | N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DP... | 
| DataSheet: |  STD6N80K5 Datasheet/PDF | 
| Quantity: | 1000 | 
| 1 +: | $ 0.74000 | 
| 10 +: | $ 0.71780 | 
| 100 +: | $ 0.70300 | 
| 1000 +: | $ 0.68820 | 
| 10000 +: | $ 0.66600 | 
| Vgs(th) (Max) @ Id: | 5V @ 100µA | 
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Supplier Device Package: | DPAK | 
| Mounting Type: | Surface Mount | 
| Operating Temperature: | -55°C ~ 150°C (TJ) | 
| Power Dissipation (Max): | 85W (Tc) | 
| FET Feature: | -- | 
| Input Capacitance (Ciss) (Max) @ Vds: | 255pF @ 100V | 
| Vgs (Max): | 30V | 
| Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V | 
| Series: | SuperMESH5™ | 
| Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2A, 10V | 
| Drive Voltage (Max Rds On, Min Rds On): | 10V | 
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) | 
| Drain to Source Voltage (Vdss): | 800V | 
| Technology: | MOSFET (Metal Oxide) | 
| FET Type: | N-Channel | 
| Part Status: | Active | 
| Packaging: | Tape & Reel (TR) | 
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The STD6N80K5 is a N-channel enhancement-mode field-effect transistor (MOSFET) produced by STMicroelectronics. It has a wide variety of uses and applications, as well as an impressive working principle. This article explains the applications and principles of the STD6N80K5 in greater detail.
Applications of The STD6N80K5 Transistor
TheSTD6N80K5 transistor is ideal for use in a variety of applications, including power supply systems, inverters, motor control circuits and switching regulator circuits. This transistor can also be used in many other applications and circuits, thanks to its impressive power handling abilities.
TheSTD6N80K5 is a versatile device that can handle a wide variety of tasks. It is a great option for use in power switching circuits, where it excels at loading and unloading capacitors, driving high current switches and much more. The device is also great for use in a number of other applications, such as voltage regulators, current sensors and avalanche protection circuits.
Working Principle of The STD6N80K5 Transistor
TheSTD6N80K5 uses a MOSFET structure similar to that of other transistors. In its operation, the device has two terminals, the drain and the gate. When a voltage is applied to the gate, it creates an electrostatic field within the channel of the device. This field modulates the current flowing through it, allowing the device to switch on and off.
To further understand how this device works, it is important to understand that a MOSFET consists of three parts: the source, the body and the drain. In operation, the source and the drain allow for the flow of current through them, whilst the body acts as an isolator so no current can flow through it. This is what makes this type of transistor so useful, as the strength of the electric field modulated by the gate determines whether current will be allowed to flow through the device or not.
The STD6N80K5 also features an impressive on resistance of 8 milliohms, making it ideal for handling high current applications. On top of this, the device has impressive switching capabilities and a wide operating voltage range, making it a great option for use in many different types of applications.
Conclusion
The STD6N80K5 is a versatile and powerful transistor that offers a wide variety of applications and uses. Its MOSFET design allows for easy switching and control of current, making it ideal for use in a variety of applications. Its impressive 8 milliohms on resistance and wide operating voltage range make it well suited for use in high voltage and high current applications, making it the perfect choice for a variety of projects and circuits.
The specific data is subject to PDF, and the above content is for reference
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