Allicdata Part #: | 497-3164-5-ND |
Manufacturer Part#: |
STD60NH03L-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 60A I-PAK |
More Detail: | N-Channel 30V 60A (Tc) 70W (Tc) Through Hole I-PAK |
DataSheet: | STD60NH03L-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 5V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Introduction to STD60NH03L-1
The STD60NH03L-1 is a single N-Channel Enhancement-mode Field-Effect Transistor (FET). It was designed and manufactured by STMicroelectronics, a major semiconductor manufacturer headquartered in Switzerland. It is part of the company\'s 60V Field-Effect Transistor (FET) family, and is a P-Channel, Surface-Mounted Device (SMD) type.
The STD60NH03L-1 differs from other Type-N FETs due to its low voltage level and higher drain current capability. It features a maximum drain-source voltage of 60V, a continuous drain current of up to 8A, and a maximum breakdown voltage of 100V. The transistor is also capable of providing a peak power dissipation of 95W.
Application Fields of STD60NH03L-1
The STD60NH03L-1 is typically used in various production, industrial, and aviation applications, such as in audio amplifiers, high-voltage inverters, and relay drivers. It may also be employed in battery chargers, DC-to-DC converters, solar energy conversion, power supplies, and automotive systems.
The STD60NH03L-1 is particularly suited for semiconductor-based products requiring superior efficiency and power conversion. It can also be used in relays and other high-power contactors that must switch large currents at a low voltage level. It is well-suited for use in applications demanding low-noise operation.
General Working Principle
The STD60NH03L-1 operates based on the principle of field-effect transistors (FETs). It works by allowing electric current to flow from its drain to its source, via an electrically controlled gate. The current will only flow when a certain threshold voltage is applied to the gate electrode of the transistor, which controls the current flowing from the drain to the source. When the gate voltage is increased beyond the threshold voltage, the transistor will act as an amplifier, allowing a larger current to flow from the drain to the source.
In order to operate the STD60NH03L-1 properly, the gate voltage must be carefully monitored, as any increases or decreases in the gate voltage beyond the threshold voltage can cause a transistor to become unstable or damage it. In addition, the device must not be exposed to excessive temperatures, as this can cause it to become damaged and ultimately fail.
Conclusion
The STD60NH03L-1 is a high-performance, low-voltage FET designed and manufactured by STMicroelectronics. It is suitable for applications demanding low-noise performance and superior efficiency, such as audio amplifiers, high-voltage inverters, and relay drivers. It operates based on the principle of field-effect transistors, and can handle peak power dissipation of up to 95W. Proper operation of the device requires monitoring of the gate voltage, as well as ensuring the device is not exposed to excessive temperatures.
The specific data is subject to PDF, and the above content is for reference
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