Allicdata Part #: | 497-16304-2-ND |
Manufacturer Part#: |
STD64N4F6AG |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 54A |
More Detail: | N-Channel 40V 54A (Tc) 60W (Tc) Surface Mount DPAK |
DataSheet: | STD64N4F6AG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.31443 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2415pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | Automotive, AEC-Q101, STripFET™ F6 |
Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 27A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A metal-oxide-semiconductor field-effect transistor or MOSFET, is the most widely used type of transistor in the semiconductor industry. It has many advantages over the traditional bipolar junction transistor (BJT) design and is capable of higher switching speeds, greater power efficiency, and a wider operating range. This makes it an ideal choice for high-frequency, high-power, and high-efficiency applications.The STD64N4F6AG is a single MOSFET device used in a variety of applications. Common uses include DC-DC converters, power supplies, motor control, and other switching applications. It is also a popular choice for logic-level and gate drive applications in automotive and industrial applications. The STD64N4F6AG is available in a variety of package sizes and can handle current up to 6.5A and voltage up to 100V.The working principle of the STD64N4F6AG is based on the idea of a voltage-controlled device. It consists of a source-gate-drain structure, and the drain and source are connected to a semiconductor material that forms the body of the MOSFET. The gate terminal is connected to a voltage source, and the source and drain are connected to the load. When a voltage is applied to the gate terminal, this creates an electric field across the MOSFET, which causes electrons to flow from the source to the drain. This current flow is what allows the device to perform its function. The STD64N4F6AG is a popular choice for a variety of applications due to its impressive power efficiency and high current and voltage ratings. It has a maximum breakdown voltage of 130V, a maximum drain-source resistance of 1.0 ohms, and a maximum junction temperature of 150°C. It can also handle up to 6.5A of current, making it suitable for many switching applications.It is also available in a variety of packages, including a standard SOT package, a mini SOT package, and a TSOP package. This makes it an ideal choice for applications where space is limited as the package can be tailored to fit the needs of the specific application. The STD64N4F6AG is an excellent choice for DC-DC converters, power supplies, motor control, and other switching applications. Its impressive current and voltage ratings, combined with its low on-resistance and efficient power handling, make it an ideal solution for a wide range of applications. Its wide operating range, high switching speeds, and design flexibility also make it an attractive choice for automotive and industrial use.
The specific data is subject to PDF, and the above content is for reference
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