STD65N55LF3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Series:	STripFET™ III
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The STD65N55LF3 is a state-of-the-art n-channel enhancement mode field effect transistor (FET) that is specifically designed for use in power switching applications. The STD65N55LF3 is constructed on an isolated AlGaN/GaN heterojunction structure, with a Biased p-channel MOSFET (BpM) and a self-aligned source that is compatible with typical FET layouts. It features an improved low on-resistance, a drain-to-source breakdown voltage of 65V, and a total gate charge (Qg) of 8.7nC. The STD65N55LF3 also features a low gate-to-source voltage (VGS) of +/-4V and a gate capacitance of only 0.05pF per unit.The STD65N55LF3 is well-suited for high-frequency, high-power switching applications due to its improved tonal and transient performance. It is designed to be robust and reliable, making it an excellent choice for applications where low losses, high switching speeds, and/or high static power dissipation levels are expected.The STD65N55LF3 is a normally-off FET, meaning it requires a positive gate-to-source voltage (VGS) to turn on theFET and initiate current flow. It has a threshold voltage (Vth) of 1.3V and a maximum drain-source voltage (VDS) of 65V. The STD65N55LF3 has a low total gate charge, ensuring that the device will not suffer from trapped charge issues and provides fast switching times with minimal loss.The STD65N55LF3is also very sensitive to noise and EMI, so it is important to take steps to reduce noise and reduce potential interference when using this device. Additionally, the STD65N55LF3 should be protected from high temperatures, since it is temperature sensitive and could be damaged by prolonged exposure.The STD65N55LF3 is ideal for many types of applications, including electrical grid systems, vehicle components, communications infrastructure, lighting, and consumer electronics. It can also be used in power conversion products such as buck, boost, and buck-boost converters. Its higher efficiency, lower losses, and fast switching times are desirable characteristics for these types of power converters.The STD65N55LF3 is also used in frequency converters and certain motor controls, as well as Uninterruptible Power Supplies (UPS) and other dc-dc converters. The device’s low on-resistance and gate capacitance facilitate better performance and power savings in these types of applications.Given the variety of applications the STD65N55LF3 can be used in, it is important to carefully evaluate its performance and function for your specific application. It is also important to understand the device’s limitations so that you can adjust its settings accordingly, as well as ensure proper protection against EMI and high temperatures. With proper care, the STD65N55LF3 can be a powerful and reliable solution for many industrial and consumer applications.

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