Allicdata Part #: | STD6NM60N-1-ND |
Manufacturer Part#: |
STD6NM60N-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 4.6A IPAK |
More Detail: | N-Channel 600V 4.6A (Tc) 45W (Tc) Through Hole I-P... |
DataSheet: | STD6NM60N-1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 920 mOhm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A STD6NM60N-1, are usually known as a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). They are a type of semiconductor device that can be used to control and amplify electronic signals. The STD6NM60N-1 is a N-channel MOSFET which means it can be used for switching lower currents. It is most commonly used in high-frequency power applications such as in amplifiers, power supplies, and motor control circuits.
The STD6NM60N-1 is made up of three main components. These consist of a gate, a drain, and a source. The gate is connected to the semiconductor and serves as the control point of the device. A voltage applied to the gate will control the transistor’s output at the drain and source. The drain and source are both connected to the semiconductor material and their function is to allow the flow of current through the device.
The STD6NM60N-1 has a number of unique features that make it suitable for high-frequency power applications. The device has a low on-resistance, making it capable of switching power efficiently with minimal losses. Moreover, the low input capacitance helps improve the MOSFET’s high-frequency capability. The STD6NM60N-1 also has a low gate charge which helps reduce the time delay of the device.
When used in power applications the STD6NM60N-1 can be used as an on/off switch to control the flow of power. A voltage is applied to the gate of the device to turn it on and off. When the voltage applied to the gate is below the device’s threshold voltage, the device is “off” and no current can flow through it. When the voltage exceeds the device’s threshold voltage, the device is “on” and current flows freely through it. The device can be used to either “turn on” or “turn off” power in a circuit.
The STD6NM60N-1 can also be used as an amplifier in power applications. When the voltage applied to the gate exceeds the device’s gate-source threshold voltage, the device enters the “linear region” of operation. Since the current through the device is inversely proportional to the gate-source voltage, the STD6NM60N-1 can be used to amplify an input signal. The device will amplify the input signal, which can then be used to turn on or turn off other devices in the circuit.
The STD6NM60N-1 has a variety of uses in power applications including switch mode power supplies, motor control applications, and amplifiers. It is a reliable, efficient, and cost-effective device that is easy to use in circuit design. With its low on-resistance and low input capacitance, it is capable of handling high-frequency power applications with ease.
The specific data is subject to PDF, and the above content is for reference
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