| Allicdata Part #: | 497-13939-2-ND |
| Manufacturer Part#: |
STD6N60M2 |
| Price: | $ 0.47 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V DPAK |
| More Detail: | N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DP... |
| DataSheet: |  STD6N60M2 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.42398 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 232pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
| Series: | MDmesh™ II Plus |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The STD6N60M2 is a Very High Input Impedance (VHIPTM) MOSFET that is used in a variety of applications. It is a part of the Surface Mount Transistor (SMT) family and offers a combination of high efficiency and low resistance in a very small package. Its low gate charge and low output capacitance allows it to be used in a wide range of applications such as power switching, audio signal amplification, interface, communications switching, and automotive. These features make the STD6N60M2 an ideal choice for a wide range of applications.The STD6N60M2 is a single N-channel enhancement mode MOSFET. It is designed for low voltage, low power, and low output capacitance applications. It is well suited for high-frequency switching applications as well as very low input current applications. It has a maximum on-state drain current rating of 60A and a maximum voltage rating of 600V. It has a relatively low gate threshold voltage which makes it suitable for use in low voltage applications. It has a very low RDSON which makes it a great choice for applications that require efficiency and high power density.When the gate voltage of the STD6N60M2 is below the threshold voltage, there is no current flow from the source to the drain. However, when the gate voltage rises above the threshold voltage and remains there, the MOSFET is said to be “turned on” and current flow is enabled. This is known as enhancement mode operation. When the current is low, the MOSFET will remain in an “on” state. The current can then be increased to create a large current load. The advantage of using a transistor in this way is that a large amount of current can be created using very little power.The STD6N60M2 is a great choice in automotive applications due to its high input impedance and low on-state resistance. It also has a very small package, making it easy to install in tight places. Its ability to handle high current and its low on-state switch resistance make it an ideal choice for a variety of applications. In addition, its high power density makes it a great choice for applications that require efficiency and high power density, such as in high-frequency switching applications.In summary, the STD6N60M2 is a very versatile, high-performance MOSFET. It has a low gate threshold voltage and low output capacitance which make it ideal for low voltage, low power and low output capacitance applications. Its low RDSON and high input impedance make it ideal for high-frequency switching applications and very low input current applications. It is suitable for use in a wide range of automotive and other applications and is a great choice for enhanced design efficiency.
The specific data is subject to PDF, and the above content is for reference
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