STD6N62K3

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	706pF @ 50V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	25.7nC @ 10V
Series:	SuperMESH3™
Rds On (Max) @ Id, Vgs:	1.28 Ohm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drain to Source Voltage (Vdss):	620V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The STD6N62K3 is a N-Channel MOSFET that was developed as an enhancement mode equivalent of N-channel JFETs. It features low on-resistance, high transconductance, and fast switching times, which makes it well-suited for a variety of applications. In this article, we will discuss the application fields and working principle of the STD6N62K3.

Application Field

The STD6N62K3 is primarily used to provide switching and amplification in various electronic circuits. It can be used to control power to various components, such as LEDs and solenoids, as well as to provide gain or level control in audio amplifiers. Its low on-resistance also makes it well-suited for current sensing. Additionally, it can be used in switching applications with its low input capacitance and good avalanche capability.

Operation Principle

The STD6N62K3 is a depletion-mode MOSFET, which means that the source is connected to the gate by a p-type material. When the voltage at the gate electrode is below the threshold value, the transistor is fully off, which is known as the "off state." When the voltage at the gate electrode is increased above the threshold value, the transistor is partially on, which is known as the "on state." The higher the gate voltage, the more current flows through the transistor.When in the on state, the gate voltage applied to the transistor is said to be the gate-source voltage and can be controlled by the voltage applied to the gate electrode. As the gate voltage is increased, the drain-source resistance decreases, which allows for increased current to flow through the transistor. When the gate voltage is reduced, the drain-source resistance increases, limiting the current that can flow.

Conclusion

The STD6N62K3 is a popular choice for many applications due to its low on-resistance, high transconductance, and fast switching times. It is used in electronic applications such as LED and solenoid driver circuits, audio amplifiers, and current sensing circuits. It works on the principle of depletion-mode MOSFETs, meaning that the source is connected to the gate by a p-type material. By controlling the gate voltage, the drain-source resistance is changed, allowing for more or less current to flow through the device.

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