STD60NF06T4 Allicdata Electronics
Allicdata Part #:

497-6195-2-ND

Manufacturer Part#:

STD60NF06T4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 60A DPAK
More Detail: N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount DPA...
DataSheet: STD60NF06T4 datasheetSTD60NF06T4 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD60NF06T4 is an N-channel enhancement-mode power field-effect transistor. It is specifically designed with extreme dv/dt capability and fast switching times. It is a silicon gate device, making it more reliable and giving it a wide range of applications. In this article, we will be discussing the application field and working principle of the STD60NF06T4.

The STD60NF06T4 is a robust and reliable N-channel power field-effect transistor, designed for general-purpose switching and amplifier applications. It features a wide range of possibilities, including high-frequency switching, high-power switching, low-interference switching, and amplifier applications. These features make the device a versatile and valuable tool in many areas of electronics.

The STD60NF06T4 is an enhancement-mode power FET, meaning that it has a gate voltage threshold voltage, where it will turn on. It is controlled entirely by the gate voltage, making it an ideal candidate for high-side gate drivers. It has a drain-source voltage rating of 60V, a gate-source voltage rating of 12V, and a continuous current rating of 4A. Additionally, it has an withstand voltage rating of 75V making it suitable for high voltage applications.

The working principle of the STD60NF06T4 is based on the flow of current through the device. When a positive voltage is applied to the gate, an electric field is created that attracts electrons from the source and lower

The specific data is subject to PDF, and the above content is for reference

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