STD65N55F3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	STripFET™
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction:

The STD65N55F3 transistor is a N-channel enhancement-mode Field Effect Transistor (FET). It is made with an advanced high voltage process and can stand up to 55 volts. This makes it an excellent choice for applications in the highly-demanding field of power electronics. It is a very popular choice among engineers, as it can help to easily manage higher power circuits. This article will explain the application field and working principle of the STD65N55F3 transistor.

Application Fields and Ratings of the STD65N55F3

The STD65N55F3 is primarily used for applications that require high voltage and high current. Its maximum voltage rating is 55V and its maximum current rating is 65A. It is often used for switching and amplification applications. As the transistor is N-channel, it is preferred for circuits that require higher frequencies. Moreover, its design allows for low gate-source leakage, which makes it ideal for situations where the FET must maintain a low power state. Furthermore, due to its low on-resistance, it can also be used in LED lighting, DC/DC converting, motor control and other motor drive applications.

Working Principle

The STD65N55F3 transistor works on the principle of Field Effect Transistor (FET). A FET is a type of transistor that uses an electric field to control current flow through a semiconductor material. The STD65N55F3 is an N-channel FET, which means it has an n-type semiconductor material from which electrons flow freely.The transistor works by applying a voltage to the gate of the transistor. This creates an electric field, which attracts the electrons and causes them to move. This creates a conducting channel between the source and drain of the transistor, allowing current to pass through. The larger the voltage applied to the gate, the wider the conducting channel, and therefore the greater the flow of current through the transistor.The channel can also be "pinched off" by reducing the gate voltage. This reduces the amount of current flowing through the channel and effectively shuts off the current flowing through the transistor. This is why the STD65N55F3 is ideal for switching and amplification applications, as it allows the current to be quickly and easily adjusted.

Summary

The STD65N55F3 transistor is a N-channel enhancement-mode Field Effect Transistor (FET) designed for applications that require high voltage and high current. Its maximum voltage rating is 55V and its maximum current rating is 65A, making it an ideal choice for switching and amplification applications. The transistor works on the principle of Field Effect Transistor, which uses an electric field to control current flow. This allows for quickly and easily adjusting the current within the circuit, making it an excellent choice for a wide variety of applications.

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