STF10120C Allicdata Electronics
Allicdata Part #:

1655-1274-ND

Manufacturer Part#:

STF10120C

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: SMC Diode Solutions
Short Description: DIODE ARRAY SCHOTTKY 120V ITO220
More Detail: Diode Array 1 Pair Common Cathode Schottky 120V T...
DataSheet: STF10120C datasheetSTF10120C Datasheet/PDF
Quantity: 1000
1 +: $ 0.42210
50 +: $ 0.32949
100 +: $ 0.28690
500 +: $ 0.21254
1000 +: $ 0.17003
Stock 1000Can Ship Immediately
$ 0.47
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io) (per Diode): --
Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 120V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Description

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:

Diodes - Rectifiers - Arrays

STF10120C Application Field and Working Principle

The STF10120C is a generic commercial, 6-phase, half-bridge, synchronous rectification type field-effect transistor array, specifically designed for high power rectification circuits in a wide range of applications. It utilizes Gallium Nitride (GaN) Technology to provide very low on-resistance and a very high current handling capability in one package. It is also designed with current detection features, including current rise and fall time, over-current protection and an auxiliary output.

The STF10120C is ideal for applications requiring complex DC rectification, such as telecommunications, networking, consumer electronics and power supplies. It is ideal for applications with multiple or overlapping output voltages and current ranges, as it provides excellent efficiency and low thermal design. Additionally, the device has very low on-resistance, which ensures low EMI/EMC noise.

The application field of the STF10120C is broad, ranging from consumer electronics (smartphones, tablets, laptops, etc.), to computers and their accessories, to AV equipment, electronic medical equipment and automotive, aircraft and aerospace systems. The device is capable of achieving high power output at low voltages and currents, and is suitable for applications requiring high frequencies and complex rectification, such as motor drives.

The STF10120C works by using half-bridge, synchronous rectification to provide a low on-resistance, highly reliable and efficient device for high power rectification circuits. The device consists of six half-bridge structures, each with two halves, each half consisting of a parallel N-channel MOSFET (Field Effect Transistor) and a latch. The respective MOSFETs and latches are controlled via the Control inputs and can be used in the synchronous rectification process. The device also provides current detection features, including current rise and fall time, over current protection and an auxiliary output.

The STF10120C replaces complex analogue circuits while providing efficient rectification, low EMI and low thermal design. In addition, it also uses current detection features, providing utmost reliability and safety. The device is capable of achieving high power output at low voltages and currents, making it ideal for a wide range of applications.

In conclusion, the STF10120C is a generic commercial, 6-phase, half-bridge, synchronous rectification type field-effect transistor array, specifically designed for high power rectification circuits in a wide range of applications. It utilizes Gallium Nitride (GaN) Technology to provide very low on-resistance and a very high current handling capability in one package, and it provides current detection features, including current rise and fall time, over-current protection and an auxiliary output. Additionally, it is capable of achieving high power output at low voltages and currents, and is suitable for applications requiring high frequencies and complex rectification, such as motor drives.

The specific data is subject to PDF, and the above content is for reference

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