Allicdata Part #: | 497-7466-5-ND |
Manufacturer Part#: |
STF12NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 10A TO-220FP |
More Detail: | N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-2... |
DataSheet: | STF12NM60N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30.5nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 410 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STF12NM60N is a common field effect transistor (FET) widely used in electronics, power management and process control. It belongs to the category of single MOSFETs, which are unipolar transistors comprising the most widely used type of FETs.
MOSFETs like STF12NM60N are voltage-controllable semiconductor switches, with the gate controlled by an electric field. The primary benefit of using these FETs is their low on-resistance, which makes them more power efficient than other types of transistors, and can be used to control higher voltages and currents. In addition, they offer better thermal stability, faster switching times, and are less prone to noise than BJT’s, making them ideal for high frequency applications.
The main application or purpose of STF12NM60N is for power switching and voltage regulation, such as in switching power supplies, battery chargers, and LED driver circuits. The main working principle behind the STF12NM60N includes the three-terminal source, drain, and gate regions. When a positive gate voltage is applied, the electrons from the source to the drain are allowed to pass through, allowing a current to flow in the process and causing a voltage drop as a result. When the gate voltage is reduced or removed, the current is blocked and the field-effect transistor is turned “off”. This mechanism is the crux of the working of the STF12NM60N.
Given its versatile features, STF12NM60N is a cost-effective solution for electronic designers. It can be used in various situations, such as for specific logic functions, as a half-bridge, or switch mode power supply circuits. In addition, its low on-resistance has resulted in it becoming popular for applications that require higher switching frequencies and performances. For instance, the STF12NM60N can be used for motor control, lighting and automotive circuits.
In conclusion, STF12NM60N is an especially versatile field effect transistor that synthesizes the benefits of both BJTs and MOSFETs. Its low on-resistance, excellent switching speed and high thermal stability makes it a valuable component in a variety of applications, while its cost-efficiency makes it an ideal choice for electronic designers.
The specific data is subject to PDF, and the above content is for reference
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